SIR836DP-T1-GE3

Name: SIR836DP-T1-GE3
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO EP T/R

7,257 Effective Inventory

SIR836DP-T1-GE3

Effective Inventory7,257

Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO EP T/R

Manufacturer Part # : SIR836DP-T1-GE3
Package/Case: PowerPAKSO-8
Part Status : Active
Brand: Siliconix
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

WireTransfer

Paypal

CreditCard

WesternUnion

MoneyGram

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

Tape and Reel

Cut Tape

Tube or Tray

SIR836DP-T1-GE3 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for SIR836DP-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

Quantity^*

Contact Person^*

E-mail^*

Company Name

Anything else?

Details

Product SIR836DP-T1-GE3 is a MOSFET with N Channel transistor polarity, designed for a continuous drain current Id of 21A and a drain source voltage Vds of 40V. With an on resistance Rds(on) of 0.015ohm at a test voltage Vgs of 10V, this MOSFET is capable of handling power dissipation of up to 15.6W. Additionally, it is RoHS compliant, ensuring that it meets regulations for environmentally friendly electronics

Key Features

Ultra-low leakage current for improved efficiency
High-speed switching for precise control
Rugged package for harsh environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
REACH	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	PowerPAK-SO-8
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	21 A
Rds On - Drain-Source Resistance	19 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	11.8 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature !	+ 150 C
Pd - Power Dissipation	15.6 W	Channel Mode	Enhancement
Tradename	TrenchFET, PowerPAK	Series	SIR
Brand	Vishay Semiconductors	Configuration	Single
Fall Time	9 ns	Forward Transconductance - Min	35 S
Height	1.04 mm	Length	6.15 mm
Product Type !	MOSFET	Rise Time !	13 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	8 ns	Width	5.15 mm
Part # Aliases	SIR836DP-GE3	Unit Weight	0.017870 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SIR836DP-T1-GE3 PDF Download

FAQs

What is SIR836DP-T1-GE3?

The SIR836DP-T1-GE3 is a high-power, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay Siliconix. It is ideal for high-current, high-efficiency power management applications, such as power supplies, motor control, and electronic load switching.

How Does SIR836DP-T1-GE3 Work?

The SIR836DP-T1-GE3 operates as a high-power switching device, allowing or interrupting the flow of current in power circuits. It offers low on-resistance and fast switching characteristics, enabling efficient power management and control. The MOSFET is designed to handle high currents and operate at high frequencies, making it suitable for a wide range of power electronics applications.

How Many Pins does SIR836DP-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SIR836DP-T1-GE3 is packaged in a PowerPAK SO-8 (Small Outline Package) package. The pinout configuration includes:

Source: Pin for the source terminal (connected to the ground or common reference).
Gate: Pin for the gate terminal (controls the switching operation).
Drain: Pin for the drain terminal (connects to the load or power supply).
NC (No Connection): Pin not internally connected, used for thermal dissipation or mechanical support.

What are the Pros and Cons of SIR836DP-T1-GE3?

Pros:

High Power Handling: Capable of handling high currents and power levels.
Low On-Resistance: Minimizes power dissipation and improves efficiency.
Fast Switching: Enables high-frequency operation and rapid response in power control applications.
Compact Package: The PowerPAK SO-8 package offers a good balance of thermal performance and size.
RoHS Compliant: Meets environmental standards for lead-free manufacturing.

Cons:

Gate Drive Considerations: May require appropriate gate drive circuitry for optimal performance.
Heat Dissipation: High-power applications may require additional thermal management considerations.
Complexity: MOSFETs require careful attention to voltage, current, and temperature limitations for reliable operation.

Are There Any Equivalents/Alternatives to SIR836DP-T1-GE3 for Recommendation?

Some equivalents or alternatives to the SIR836DP-T1-GE3 include:

IRFZ44N from Infineon Technologies: A similar N-channel MOSFET suitable for high-power applications.
AON6220 from Alpha and Omega Semiconductor: Another alternative for high-power switching applications.