SIA456DJ-T1-GE3

Name: SIA456DJ-T1-GE3
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R

6,507 Effective Inventory

SIA456DJ-T1-GE3

Effective Inventory6,507

Trans MOSFET N-CH 200V 2.6A 6-Pin PowerPAK SC-70 T/R

Manufacturer Part # : SIA456DJ-T1-GE3
Package/Case: SC706-6
Part Status : Active
Brand: Siliconix
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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SIA456DJ-T1-GE3 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Details

The SIA456DJ-T1-GE3 is a 200VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for boost converter applications.

Key Features

TrenchFET® power MOSFET

Thermally enhanced PowerPAK® SC-70 package

Small footprint area

Low on-resistance

Application

Industrial
Power Management
Portable Devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SC-70-6	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	2.6 A	Rds On - Drain-Source Resistance	1.38 Ohms
Vgs - Gate-Source Voltage	- 16 V, + 16 V	Vgs th - Gate-Source Threshold Voltage	600 mV
Qg - Gate Charge	5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	19 W
Channel Mode	Enhancement	Tradename	TrenchFET, PowerPAK
Series	SIA	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	20 ns
Forward Transconductance - Min	5 S	Product Type !	MOSFET
Rise Time !	25 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	30 ns	Typical Turn-On Delay Time	10 ns
Part # Aliases	SIA456DJ-GE3	Unit Weight	0.001784 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SIA456DJ-T1-GE3 PDF Download

FAQs

What is SIA456DJ-T1-GE3?

The SIA456DJ-T1-GE3 is an N-channel enhancement mode power MOSFET designed by Vishay Siliconix. It is suitable for power management applications requiring high efficiency and low on-state resistance, such as DC-DC converters, voltage regulation, and motor control.

How Does SIA456DJ-T1-GE3 Work?

The SIA456DJ-T1-GE3 operates as a power MOSFET, controlling the flow of current between the source and drain terminals based on the gate voltage. By adjusting the gate voltage, the MOSFET can switch on and off rapidly, making it efficient for power switching applications. The low on-state resistance of the MOSFET minimizes power losses during conduction.

How Many Pins does SIA456DJ-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SIA456DJ-T1-GE3 is housed in a standard power MOSFET package, typically with three pins:

G: Gate terminal for controlling the MOSFET.
S: Source terminal where the current flows in and out.
D: Drain terminal for the main current flow.

What are the Pros and Cons of SIA456DJ-T1-GE3?

Pros:

High Efficiency: Offers low on-state resistance for minimal power dissipation.
Enhancement Mode: Can be easily driven by logic-level signals for simple control.
Fast Switching Speed: Enables rapid on/off switching suitable for high-frequency applications.
Compact Design: Power MOSFETs are typically compact in size, saving board space.

Cons:

Gate Voltage Control: Requires careful gate driver design to prevent shoot-through and ensure proper operation.
Heat Dissipation: May require additional heatsinking for high power applications to manage thermal dissipation.

Are There Any Equivalents/Alternatives to SIA456DJ-T1-GE3 for Recommendation?

Alternatives to the SIA456DJ-T1-GE3 include the IRF3205 from Infineon, the FDPF8N60NZ from Fairchild Semiconductor, and the STP55NF06L from STMicroelectronics.