SIS990DN-T1-GE3

Name: SIS990DN-T1-GE3
Rating: 4.5 (10 reviews)

PowerPAK1212-8 MOSFETs ROHS - Product SIS990DN-T1-GE3

3,352 Effective Inventory

SIS990DN-T1-GE3

Effective Inventory3,352

PowerPAK1212-8 MOSFETs ROHS - Product SIS990DN-T1-GE3

Manufacturer Part # : SIS990DN-T1-GE3
Package/Case: PowerPAK-1212-8
Brand: Vishay
Product Categories : FET, MOSFET Arrays

Quality Assurance

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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SIS990DN-T1-GE3 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for SIS990DN-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

The SIS990DN-T1-GE3 is a 2N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high performance and efficiency in electronic applications. It has a voltage rating of 100V and can handle a continuous drain current of 12.1A, making it suitable for various power management tasks. The package type of the SIS990DN-T1-GE3 is PPAK1212, which is a compact and efficient package design that allows for easy mounting and heat dissipation. This makes it ideal for use in space-constrained applications where thermal management is crucial. The MOSFET features a low on-resistance and high switching speed, which results in reduced power dissipation and improved efficiency in switching applications. It also has a low gate charge and gate threshold voltage, making it easy to drive and control.

Key Features

High-speed data transmission
Robust network connectivity
Synthesizes high performance

Fully integrated Ethernet solution
Low power consumption guaranteed
Compact size with superior functionality

Application

Reliable industrial connectivity
Advanced IoT technology
High-performance routers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
REACH	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	PowerPAK-1212-8
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	12.1 A
Rds On - Drain-Source Resistance	85 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	8 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature !	+ 150 C
Pd - Power Dissipation	25 W	Channel Mode	Enhancement
Tradename	TrenchFET, PowerPAK	Series	SIS
Brand	Vishay Semiconductors	Configuration	Dual
Fall Time	6 ns	Forward Transconductance - Min	11 S
Product Type !	MOSFET	Rise Time !	8 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	8 ns	Unit Weight	0.032487 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SIS990DN-T1-GE3 PDF Download

FAQs

What is SIS990DN-T1-GE3?

The SIS990DN-T1-GE3 is a dual N-channel enhancement mode power MOSFET designed by Vishay Siliconix. It is designed to deliver high efficiency and power density in a compact form factor, making it suitable for power management applications in various electronic devices and systems.

How Does SIS990DN-T1-GE3 Work?

The SIS990DN-T1-GE3 works by controlling the flow of electrical current between the drain and source terminals in response to the gate voltage. As an N-channel MOSFET, it allows current to flow when a sufficient voltage is applied to the gate terminal, enabling efficient power switching and regulation in electronic circuits and systems.

How Many Pins does SIS990DN-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SIS990DN-T1-GE3 is housed in a compact WDFN (2x2) 4-lead package. The pinout configuration includes:

1: G (Gate) - Controls the conduction of the MOSFET.
2: S (Source) - Connects to the source of the MOSFET.
3: S (Source) - Connects to the source of the MOSFET.
4: D (Drain) - Connects to the drain of the MOSFET.

What are the Pros and Cons of SIS990DN-T1-GE3?

Pros:

High Efficiency: Delivers high power efficiency, reducing power loss in electronic circuits.
Compact Form Factor: The WDFN package offers a space-efficient solution for compact designs.
Enhancement Mode: As an enhancement mode MOSFET, it offers precise control over power flow.
Low On-Resistance: Enables low conduction losses and improved power handling.
Reliable Performance: Provides stable and reliable power management in various applications.

Cons:

Gate Drive Consideration: Requires careful consideration of gate drive voltage for proper operation.
Heat Dissipation: May require thermal management considerations for high-power applications.
External Protection: Additional circuitry may be needed for protection against voltage spikes and overcurrent conditions.

Are There Any Equivalents/Alternatives to SIS990DN-T1-GE3 for Recommendation?

Alternatives to the SIS990DN-T1-GE3 include the SI7852DP-T1-GE3 from Vishay Siliconix and the BSS138 from ON Semiconductor, which are also N-channel MOSFETs suitable for similar power management applications.