SI7852DP-T1-E3

Name: SI7852DP-T1-E3
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO EP T/R

3,475 Effective Inventory

SI7852DP-T1-E3

Effective Inventory3,475

Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO EP T/R

Manufacturer Part # : SI7852DP-T1-E3
Package/Case: PowerPAKSO-8
Part Status : Active
Brand: Siliconix
Product Categories : Single FETs, MOSFETs

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SI7852DP-T1-E3 DataSheet

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Details

Introducing the SI7852DP-T1-E3 from Vishay Siliconix, a groundbreaking dual N-channel MOSFET built for high-frequency power conversion applications. Boasting a dual MOSFET design, this device offers exceptional flexibility and efficiency for a wide range of circuit configurations. Its low on-resistance ensures minimal power wastage, enhancing overall efficiency in power conversion tasks. Additionally, its high switching speed makes it perfect for high-frequency operations like switching voltage regulators and power supplies. With a compact package size, the SI7852DP-T1-E3 maximizes board space utilization and allows for designs with superior power density. Furthermore, its RoHS compliance underscores its commitment to environmental responsibility, offering a sustainable solution for environmentally conscious projects seeking cutting-edge power management solutions

Key Features

This is a high-performance power MOSFET
Designed for fast switching and efficient energy conversion
With a low on-resistance and robust thermal performance, it excels in harsh environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	PowerPAK-SO-8	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	80 V
Id - Continuous Drain Current	7.6 A	Rds On - Drain-Source Resistance	16.5 mOhms
Vgs - Gate-Source Voltage	+ 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	34 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	1.9 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI7	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	31 ns
Forward Transconductance - Min	25 S	Product Type !	MOSFET
Rise Time !	11 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N Channel
Typical Turn-Off Delay Time	40 ns	Typical Turn-On Delay Time	17 ns
Part # Aliases	SI7852DP-E3	Unit Weight	0.017870 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification SI7852DP-T1-E3 PDF Download

FAQs

What is SI7852DP-T1-E3?

The SI7852DP-T1-E3 is a p-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay Siliconix. It is commonly used for power management applications, such as load switching and battery protection, in various electronic devices and systems.

How Does SI7852DP-T1-E3 Work?

The SI7852DP-T1-E3 operates as a p-channel MOSFET, allowing it to control the flow of current in a circuit based on the voltage applied to its gate terminal. When a suitable voltage is applied to the gate, the MOSFET conducts current, effectively acting as an electronically controlled switch for power management applications.

How Many Pins does SI7852DP-T1-E3 have and What are the Functions of the Pinout Configuration?

The SI7852DP-T1-E3 is housed in a compact PowerPAK SO-8 package. The pinout configuration includes:

Pin 1 (G): Gate terminal for controlling the MOSFET's conductivity.
Pin 2 (P): Pseudo-drain connection for the MOSFET's source terminal.
Pin 3 (NC): No connection.
Pin 4 (S): Source terminal for the MOSFET, connected to the ground or negative rail in typical applications.
Pin 5 (S): Source terminal for the MOSFET, connected to the ground or negative rail in typical applications.
Pin 6 (D): Drain terminal for the MOSFET, connected to the load or positive rail in typical applications.
Pin 7 (D): Drain terminal for the MOSFET, connected to the load or positive rail in typical applications.
Pin 8 (NC): No connection.

What are the Pros and Cons of SI7852DP-T1-E3?

Pros:

Low On-Resistance: Provides low on-resistance for efficient power management.
Compact Package: The PowerPAK SO-8 package offers a space-efficient design for compact electronic systems.
High Power Handling: Capable of handling moderate to high power levels in load switching applications.
Reverse Voltage Protection: Suitable for battery protection and reverse polarity applications.

Cons:

Drive Voltage Limitation: Requires a higher gate-source voltage for full enhancement, which may affect compatibility with certain control circuits.
Heat Dissipation: May require adequate heat sinking or thermal management for high-power applications to prevent overheating.