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SOT-523 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| BAV99T-7-F | Taped and Reeled Diode | Diodes Incorporated | 3~7 Days | 3,750 | ||
| 2SC1740S-R | Small signal BJT | ROHM | 3~7 Days | 5,749 | ||
| LTC014EEBFS8TL | Mosfet Transistor | ROHM | 3~7 Days | 3,577 | ||
| DTC114YE | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-75/90, 3 PIN | ROHM | 3~7 Days | 7,759 | ||
| DTC124XE | Bipolar transistors preconfigured with bias | ROHM | 3~7 Days | 4,329 | ||
| MRMS541D | MRMS541D is a type of magnetic switch used for various applications | MURATA | 3~7 Days | 5,459 | ||
| MMBT2907AT-7-F | MMBT2907AT-7-F transistor comes in a 3-pin surface mount package and is sold in tape and reel packaging | DIODES | Active | 3~7 Days | 4,913 | |
| DTC114TE | This transistor has a breakdown voltage of 50V and a low leakage current of 500nA | ROHM | 3~7 Days | 7,402 | ||
| DTC144EM | DTC144EM stands out as an exemplary electronic component, delivering exceptional performance and longevity | ROHM | 3~7 Days | 4,692 | ||
| BAV170T-7-F | Surface mount low leakage diode | Diodes Incorporated | 3~7 Days | 7,803 | ||
| BAV199T-7-F | General Purpose Diodes - Capable of versatile applications | Diodes Incorporated | 3~7 Days | 4,903 | ||
| 2SCR523EB | Dual silicon controlled rectifier | ROHM | 3~7 Days | 3,855 | ||
| 2SC5585 | Bipolar transistor with 1 element, NPN type, designed for low-power electronic circuits | ROHM | 3~7 Days | 3,362 | ||
| 2SCR502EBTL | This product has a power dissipation of 0.15W and operates at a temperature of up to 150°C | ROHM | 3~7 Days | 4,993 | ||
| 2SC5800 | Transistor 2SC5800 for RF small-signal applications | Renesas Electronics Corporation | 3~7 Days | 4,110 | ||
| PRF949 | Wideband NPN Transistor by NXP Semiconductors (Product Code: PRF949) | NXP | 3~7 Days | 4,190 | ||
| 1SV283 | Identified by the code 1-1G1A, product 1SV283 is a two-pin diode offering variable capacitance, with a capacitance of 31 | TOSHIBA | 3~7 Days | 3,169 | ||
| RCLAMP2402B | Electrostatic safeguard in compact SOT-523 form | SEMTECH | 3~7 Days | 5,889 | ||
| RN2106 | 100 milliamp PNP silicon transistor with a 50 volt rating, designed for general-purpose small signal applications, featuring a 3-pin configuration | TOSHIBA | 3~7 Days | 6,980 | ||
| 2SC5609 | SSSMINI3-F1 package containing a single NPN transistor | PANASONIC | 3~7 Days | 4,521 | ||
| RN1106 | With a resistance of 4.7 kOhm, the RN1106 NPN transistor offers a high level of accuracy and stability in electronic circuits | TOSHIBA | 3~7 Days | 3,633 | ||
| RN1108 | Transistor RN1108 is a general-purpose small signal NPN silicon device capable of handling currents up to 100 mA and voltages up to 50 V | TOSHIBA | 3~7 Days | 5,788 | ||
| SI1012R | SI1012R chip is low voltage, synchronous step-down DC/DC converter from Silicon Labs. | VISHAY | 3~7 Days | 7,404 | ||
| DTC114Y | Small signal NPN transistor rated for 100mA and 50V, made of silicon, available in TO-92 or TO-226AA package with 3 pins | ROHM | 3~7 Days | 7,430 | ||
| RN1115 | Small-Signal Silicon NPN Bipolar Transistor, 100 mA, 50 V | TOSHIBA | 3~7 Days | 6,193 | ||
| 2SC4617FRATLR | NPN Transistor, 50V, 0.15A, SOT-416 Package | ROHM | 3~7 Days | 4,995 | ||
| SI1022R | Transistor for Power Applications | VISHAY | 3~7 Days | 7,783 | ||
| RE1C001UN | RE1C001UN chip is a highly integrated radio frequency front-end module for IoT applications. | ROHM | 3~7 Days | 6,176 | ||
| PJE138K | PJE138K Small Signal N Channel MOSFET with Rds(on) above 1 ohm | PANJIT | 3~7 Days | 7,506 | ||
| T3V3S5 | TVS DIODE 3.3VWM 16VC SOD523 | DIODES | 3~7 Days | 6,049 | ||
| DTC023JUB | 100mA/50V Digital transistors(with built-in resistors) | ROHM | 3~7 Days | 6,465 | ||
| DTC014EEB | 100mA/50V Digital transistors(with built-in resistors) | ROHM | 3~7 Days | 7,579 | ||
| 2SD2216 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SSMINI3-G1, SC-75, 3 PIN | PANASONIC | 3~7 Days | 5,445 | ||
| PDTC123 | NPN resistor-equipped transistor | NXP | 3~7 Days | 6,930 | ||
| RUE002N02 | Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, 3 PIN | ROHM | 3~7 Days | 5,048 | ||
| DMG1013T | 20V 550mA 610mΩ@4.5V, 550mA 280mW 750mV@250uA 5pF@10V P Channel 60pF@10V +150℃@(Tj) SOT-523 MOSFETs ROHS | DIODES | Active | 3~7 Days | 4,512 | |
| 2SC1740S-S | Small Signal Bipolar Transistor | ROHM | 3~7 Days | 4,080 | ||
| 2SC4617EB | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3F, 3 PIN | ROHM | 3~7 Days | 6,925 | ||
| 2SC4783 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | NEC | 3~7 Days | 7,485 | ||
| PDTC143XE | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN | NXP | 3~7 Days | 3,138 |
Additional Package/Case