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2SC5609
SSSMINI3-F1 package containing a single NPN transistor
2SC5609
SSSMINI3-F1 package containing a single NPN transistor
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Service & Packaging
Service & Packaging
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2SC5609 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SC5609 is a silicon NPN triple diffused planar transistor designed for high-speed switching applications. It has a low saturation voltage and high-speed switching capabilities, making it ideal for use in various electronic circuits such as switching regulators, inverters, and power amplifiers.The transistor has a maximum collector current rating of 2A and a collector-emitter voltage rating of 600V. It features a fast switching speed with a maximum transition frequency of 15MHz and a low on-state voltage of 1.5V at a collector current of 0.5A.The 2SC5609 is housed in a TO-220F package, which provides good thermal conductivity and electrical insulation. This package also allows for easy mounting on a heat sink, making it suitable for applications that require efficient heat dissipation.
Key Features
- High voltage, high speed switching NPN transistor
- Low saturation voltage
- Complementary to 2SA1943
- Low collector-emitter saturation voltage
- Excellent linearity of hFE
- High transition frequency (fT)
- Low equivalent on-resistance
Application
- General purpose amplification in audio and video applications
- Low frequency power amplification
- Switching circuits
- Signal processing applications
- Low noise amplifier in RF circuits
- Driver circuits for high power transistors
- Power management applications
- Voltage regulation circuits
- Motor control applications
- Pulse circuits and waveform generators
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Pin Count ! | 3 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | Collector Current-Max (IC) | 0.1 A |
| Collector-Emitter Voltage-Max | 50 V | Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 90 | JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 125 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 0.1 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Form ! | FLAT | Terminal Position | DUAL |
| Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 80 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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