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2SK2056
Single-element Power FET suitable for high-voltage applications
2SK2056
Single-element Power FET suitable for high-voltage applications
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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2SK2056 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SK2056 is a power MOSFET transistor designed for high-speed switching applications in electronic devices. It has a maximum voltage rating of 900 volts and a maximum continuous current rating of 16 amperes. The transistor is housed in a TO-3P package and features low on-state resistance, allowing for efficient power management.The 2SK2056 has a gate threshold voltage ranging from 2 to 4 volts, making it suitable for a wide range of digital and analog applications. It is typically used in power supplies, inverters, motor control circuits, and other high-power electronic systems.The transistor has a low input capacitance and fast switching times, making it ideal for high-frequency applications. It has a high power dissipation rating of 150 watts, allowing it to handle high power loads without overheating.
Key Features
- P-channel MOSFET transistor
- High input impedance
- Low on-state resistance
- Low input capacitance
- High current capability
- Low gate threshold voltage
- High power efficiency
- Fast switching speed
- Designed for high-speed switching applications
- Available in TO-220 package
Application
- Power switching applications
- Amplifier circuits
- Audio equipment
- Industrial control systems
- High voltage applications
- Switching power supplies
- Lighting systems
- Motor control
- Instrumentation
- Feedback control systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Reach Compliance Code | |
| ECCN Code | EAR99 | HTS Code ! | 8541.29.00.95 |
| Configuration | SINGLE | DS Breakdown Voltage-Min | 800 V |
| Drain Current-Max (ID) | 4 A | Drain-source On Resistance-Max | 2.4 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 40 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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