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SOT252 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| 2SJ680 | 2SJ680 technical information: 200V, 2.5A P-Ch MOSFET | Toshiba | 3~7 Days | 3,576 | ||
| FQD2N80 | Dissipation:2.5W; Power, Pd:2.5W; SMD Marking:FQD2N80; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V | FAIRCHILD | 3~7 Days | 5,642 | ||
| NJM2855DL1-33 | Efficient fixed positive voltage regulation with 3 pins | JRC | 3~7 Days | 7,154 | ||
| MBRD660CTPBF | Schottky Diodes and Rectifiers | VISHAY | 3~7 Days | 4,241 | ||
| TA78033AF | Toshiba TA78033AF | Toshiba Semiconductor And Storage | 3~7 Days | 5,466 | ||
| NJM2391DL1 | NJM2391DL1 LDO Regulator Description | JRC | 3~7 Days | 7,126 | ||
| MBRD1040CT | MBRD1040CT belongs to the category of Schottky diodes and rectifiers | Onsemi | OBSOLETE | 3~7 Days | 5,945 | |
| BUK9230-100B | DPAK Packaged N-Channel MOSFET for Automotive Sector | NXP | OBSOLETE | 3~7 Days | 4,163 | |
| UPC2933AT-AZ | 3 Terminal Regulators | Renesas Electronics America Inc | 3~7 Days | 6,561 | ||
| 2SK3814 | 60A N-Channel Silicon Power MOSFET, 60V Voltage Rating, TO-251AA Package | Renesas | 3~7 Days | 7,207 | ||
| IRLR3802 | N-Channel, Silicon | INFINEON | 3~7 Days | 7,621 | ||
| IRF9020 | IRF9020 is a power MOSFET transistor used for switching applications. | INFINEON | 3~7 Days | 3,446 | ||
| SPB-G56S | Silicon Schottky Rectifier Diode with 1 Phase Configuration and 1 Element, featuring 5A Current and 60V Voltage Rating in DPAK-3 Package | SANKEN | 3~7 Days | 3,694 | ||
| MTD2N50 | TO-252-packaged N-channel MOSFET transistor featuring a maximum drain-to-source voltage rating of 500 volts and a maximum drain current of 2 amperes | Onsemi | 3~7 Days | 4,512 | ||
| MTD3055EL | Silicon N-Channel Metal-oxide Semiconductor FET | Onsemi | 3~7 Days | 4,559 | ||
| 50WQ03 | Rectifier Diode | IR | 3~7 Days | 7,702 | ||
| MTD10N05E | MTD10N05E: 1-Element, 50V N-Channel FET | Onsemi | 3~7 Days | 7,950 | ||
| 2N03L10 | 2N03L10 is a high voltage N-channel MOSFET transistor. | INFINEON | 3~7 Days | 5,363 | ||
| 2SA124 | 2SA124 is a PNP silicon transistor used for audio amplifier and general purpose applications. | NEC | 3~7 Days | 7,536 | ||
| 2SK1113 | Silicon N-Channel Power MOSFET | TOSHIBA | 3~7 Days | 5,041 | ||
| 50WQ04 | 5.5 A Silicon Rectifier Diode | IR | 3~7 Days | 6,545 | ||
| 2SJ506 | The 2SJ506 is a power MOSFET transistor designed for high-speed switching applications. | Renesas Electronics | 3~7 Days | 3,153 | ||
| MTD1N60E | N-CHANNEL 600V V(BR)DSS MOSFET TRANSISTOR, 1A I(D), TO-252AA | Onsemi | 3~7 Days | 6,747 | ||
| TA48015BF | PSSO2, 2.30 MM PITCH, PLASTIC, HSOP-3 | TOSHIBA | 3~7 Days | 5,258 | ||
| 2SD1557 | Help is limited to customers who have previously utilized these products | TOSHIBA | 3~7 Days | 5,612 | ||
| FR3711Z | FR3711Z chip is a low-power wireless microcontroller with integrated sub-GHz radio for IoT applications. | IR | 3~7 Days | 6,505 | ||
| 2SK945 | TRANSISTOR 1 A, 400 V, 5 ohm, N-CHANNEL, Si | TOSHIBA | 3~7 Days | 5,723 | ||
| CJD350 | Power Bipolar Transistor | CENTRAL | 3~7 Days | 4,846 | ||
| 30WQ05F | 3A current rating | IR | 3~7 Days | 7,717 | ||
| 2SK2329 | Silicon N-Channel MOS FET | HITACHI | 3~7 Days | 3,255 | ||
| 2SJ599 | Small Signal Field-Effect Transistor, 20A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, MP-3, 3 PIN | NEC | 3~7 Days | 4,473 | ||
| 2SJ191 | Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN | SANYO | 3~7 Days | 6,890 | ||
| 2SK2925 | 60V 16.9A 2.1W 73m´Î@10V6.6A 3V@250Ã×A N Channel TO-252 MOSFETs ROHS | HITACHI | 3~7 Days | 4,221 | ||
| 2SC4332 | Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, MP-3, 3 PIN | NEC | 3~7 Days | 6,547 | ||
| TA7815F | IC VREG 15 V FIXED POSITIVE REGULATOR, PSIP3, 2.30 MM PITCH, PLASTIC, HSIP-3, Fixed Positive Single Output Standard Regulator | TOSHIBA | 3~7 Days | 7,255 | ||
| 2SC3076 | TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | TOSHIBA | 3~7 Days | 7,672 | ||
| 2SB1516 | Transistor, | ROHM | 3~7 Days | 6,269 | ||
| STGD6NC60HDT4 | IGBT Transistors PowerMESH" IGBT | stmicroelectronics | ACTIVE | 3~7 Days | 9,742 | |
| 3055A | ROHS compliant Hall sensor for precise sensing applications - 3055A | Honeywell | Active | 3~7 Days | 6,416 | |
| TA48M03F | Lead-Free Plastic IC Voltage Regulator with 3 V Output | Toshiba Semiconductor And Storage | 3~7 Days | 6,942 |
Additional Package/Case