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MTD1N60E
N-CHANNEL 600V V(BR)DSS MOSFET TRANSISTOR, 1A I(D), TO-252AA
MTD1N60E
N-CHANNEL 600V V(BR)DSS MOSFET TRANSISTOR, 1A I(D), TO-252AA
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MTD1N60E DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The MTD1N60E is a N-channel power MOSFET transistor designed for high-speed power switching applications. It is part of the DPAK package family and has a drain-to-source voltage rating of 600V and a continuous drain current of 1A. This transistor is suitable for a wide range of applications including power supplies, motor control, and lighting. It features low on-state resistance for efficient power handling and fast switching speeds for improved performance. The MTD1N60E also has a low threshold voltage and gate charge, making it easy to drive with minimal power loss.The device is designed for high temperature operation, with a junction temperature rating of 150°C. It also has a low reverse recovery time and is built to withstand transient voltage spikes common in many power switching applications.
Key Features
- Low on-resistance
- High blocking voltage
- Fast switching speed
- Low gate charge
- Low leakage current
- Enhanced avalanche ruggedness
- TO-252 package
- Excellent thermal performance
- High reliability
- RoHS compliant
Application
- Switch mode power supplies
- Power factor correction circuits
- Motor control circuits
- Lighting ballasts
- Electronic ballasts
- Audio amplifiers
- RF amplifiers
- Inductive heating circuits
- Solar inverters
- Uninterruptible power supplies (UPS)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | Configuration | Single |
| DS Breakdown Voltage-Min | 600 V | Drain Current-Max (Abs) (ID) | 1 A |
| Drain Current-Max (ID) | 1 A | Drain-source On Resistance-Max | 8 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e0 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 40 W | Pulsed Drain Current-Max (IDM) | 3 A |
| Qualification Status ! | Not Qualified | Surface Mount ! | YES |
| Terminal Finish | Tin/Lead (Sn/Pb) | Terminal Form ! | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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