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TDSON-8 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| BSC100N06LS3GATMA1 | Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R | Infineon Technologies | Active | 3~7 Days | 6,786 | |
| BSC028N06LS3GATMA1 | The BSC028N06LS3GATMA1 device is a N-channel MOSFET designed for power applications | Infineon Technologies | ACTIVE | 3~7 Days | 7,016 | |
| BSC035N04LSGATMA1 | Trans MOSFET with N-channel and 40V voltage rating | Infineon Technologies | Active | 3~7 Days | 5,215 | |
| BSC093N04LSGATMA1 | The BSC093N04LSGATMA1 is a unipolar N-MOSFET transistor with a maximum voltage rating of 40V and a maximum current rating of 40A | Infineon Technologies | 3~7 Days | 8,499 | ||
| BSC020N03LSGATMA1 | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | Infineon Technologies | Active | 3~7 Days | 8,249 | |
| BSC024NE2LSXT | 25V 100A N-channel MOSFET with OptiMOS technology in TDSON-8 package | Infineon | 3~7 Days | 7,006 | ||
| ISC104N12LM6ATMA1 | 120V 11A 8-pin TDSON EP N-channel Transistor MOSFET | Infineon Technologies | ACTIVE | 3~7 Days | 7,510 | |
| BSC018N04LSGXT | N-channel MOSFET rated at 40V and 100A, housed in TDSON-8 package OptiMOS 3 | Infineon | 3~7 Days | 6,214 | ||
| IPG20N06S4L11ATMA2 | Voltage range of 40V to 60V for IPG20N06S4L11ATMA2 MOSFET | Infineon Technologies | ACTIVE | 3~7 Days | 5,412 | |
| BTS3125EJ | side 2A, N-Channel SMD, SO8-EP | infineon | 3~7 Days | 7,093 | ||
| BSC028N06LS3G | Resistance: 0.0028 ohm | Infineon Technologies | ACTIVE | 3~7 Days | 6,366 | |
| BSC0901NSIXT | High-performance N-channel MOSFET rated for 30V and 100A in a TDSON-8 package | Infineon | 3~7 Days | 5,779 | ||
| BSC018NE2LSIXT | OptiMOS MOSFET, N-channel, 25V, 100A, TDSON-8 package | Infineon | 3~7 Days | 6,160 | ||
| BSC016N03LSGXT | OptiMOS 3 technology enhances performance | Infineon | NRND | 3~7 Days | 9,664 | |
| BSC014NE2LSIXT | notch MOSFET transistor | Infineon | 3~7 Days | 8,326 | ||
| BSC011N03LSIXT | MOSFET BSC011N03LSIXT is a cutting-edge N-Channel semiconductor component engineered to operate at 30V with a remarkable 100A current capability | Infineon | 3~7 Days | 8,221 | ||
| BSC010NE2LS | N-channel MOSFET suitable for automotive use | Infineon | 3~7 Days | 5,790 | ||
| BSC009NE2LSXT | OptiMOS N-channel MOSFET with 25V and 100A capabilities | Infineon | 3~7 Days | 7,492 | ||
| BSC030N04NSGXT | OptiMOS 3 N-channel MOSFET, rated for 40 volts and 100 amps, in TDSON-8 package | Infineon | 3~7 Days | 8,588 | ||
| BSC13DN30NSFDATMA1 | N-channel 300V 16A Transistor MOSFET in a TDSON EP package, supplied on tape and reel | Infineon Technologies | ACTIVE | 3~7 Days | 6,447 | |
| BSC500N20NS3GATMA1 | Infineon's BSC500N20NS3GATMA1: A MOSFET transistor with N-channel design | Infineon | Active | 3~7 Days | 6,274 | |
| BSC160N15NS5ATMA1 | High-performance N-Channel MOSFET suitable for a wide range of power management applications | Infineon | Active | 3~7 Days | 5,220 | |
| IAUC100N10S5N040ATMA1 | 100V 100A N-Channel Transistor for Automotive Applications | Infineon Technologies | ACTIVE | 3~7 Days | 6,023 | |
| IPG20N10S4L22ATMA1 | Surface Mount Transistor Array | Infineon Technologies | ACTIVE | 3~7 Days | 9,652 | |
| BSC146N10LS5ATMA1 | Trench MOSFET designed for 100V and above | Infineon Technologies | ACTIVE | 3~7 Days | 5,311 | |
| BSC072N08NS5ATMA1 | Power MOSFET with N-channel, 80V voltage capacity and 74A current rating, in TDSON-8 package | Infineon Technologies | ACTIVE | 3~7 Days | 8,132 | |
| BSC037N08NS5ATMA1 | N-type Metal-Oxide-Semiconductor Field-Effect Transistor with a maximum voltage rating of 80V and current handling capacity of 100A | Infineon Technologies | ACTIVE | 3~7 Days | 9,249 | |
| IAUC28N08S5L230ATMA1 | N-Channel Power MOSFET, 80V, 28A, 0.015 ohm, TDSON, Surface Mount | Infineon | Active | 3~7 Days | 6,894 | |
| IPG20N06S4L14ATMA2 | Automotive grade N-channel power MOSFET with 60V voltage rating and 20A current rating | Infineon Technologies | ACTIVE | 3~7 Days | 7,754 | |
| IPG20N06S415ATMA2 | N-Channel Power MOSFET with 60V voltage rating | Infineon Technologies | ACTIVE | 3~7 Days | 7,878 | |
| BSC028N06NSSCATMA1 | MOSFET featuring trench technology, suitable for voltages ranging from 40 to 100 volts | Infineon | Active | 3~7 Days | 6,622 | |
| BSC112N06LDATMA1 | BSC112N06LDATMA1 MOSFETs are designed for applications requiring efficient power management | Infineon | Active | 3~7 Days | 8,922 | |
| IPG20N04S408AATMA1 | MOSFET IPG20N04S408AATMA1 - 20V, 40V | Infineon Technologies | OBSOLETE | 3~7 Days | 5,043 | |
| BSC010NE2LSIATMA1 | BSC010NE2LSIATMA1 MOSFET N-type 25V 100A TDSON-8 | Infineon Technologies | ACTIVE | 3~7 Days | 6,402 | |
| BSC009NE2LS5ATMA1 | N-type MOSFET transistor with VDS of 25V and IDS of 41A in a TDSON EP package | Infineon Technologies | ACTIVE | 3~7 Days | 5,135 | |
| BSC032NE2LSATMA1 | MOSFET transistor operating as an N-channel device | Infineon | Active | 3~7 Days | 5,635 | |
| BSC0802LSATMA1 | The BSC0802LSATMA1 is a MOSFET with N-type channel | Infineon | NRND | 3~7 Days | 8,421 | |
| BSC0704LSATMA1 | Power transistor with OptiMOS technology, rated for 60V | Infineon | NRND | 3~7 Days | 9,231 | |
| BSC0703LSATMA1 | MOSFET Power-Transistor BSC0703LSATMA1 | Infineon | NRND | 3~7 Days | 6,289 | |
| IPC100N04S5L1R9ATMA1 | Transistor MOSFET for automotive applications with N-channel configuration, 40V voltage rating, and 100A current rating | Infineon Technologies | NRND | 3~7 Days | 6,247 |
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