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TDSON-8 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| BSC077N12NS3 G | channel power MOSFET with a 120V rating | INFINEON | Active | 3~7 Days | 3,067 | |
| BSC046N10NS3 G | MOSFET N-CH 100V 17A/100A TDSON | INFINEON | Active | 3~7 Days | 6,186 | |
| BSC093N15NS5ATMA1 | MOSFET TRENCH >=100V | Infineon Technologies | 3~7 Days | 6,966 | ||
| BSC265N10LSF G | Packaging: TDSON-8-EP (5x6) package configuration | INFINEON | Active | 3~7 Days | 4,457 | |
| BSC160N10NS3 G | Manufacturer part number: BSC160N10NS3 G | INFINEON | Active | 3~7 Days | 5,831 | |
| BSC018N04LS G | BSC018N04LS G is an N-channel MOSFET designed for voltage applications up to 40V and current ratings up to 100A | INFINEON | Active | 3~7 Days | 4,290 | |
| BSC017N04NS G | BSC017N04NS G is a high-performance N-channel MOSFET designed for efficient power management | INFINEON | Active | 3~7 Days | 3,147 | |
| BSZ42DN25NS3 G | Product code: BSZ42DN25NS3 G | INFINEON | Active | 3~7 Days | 6,706 | |
| BSC520N15NS3 G | TDSON-8 packaged N-CH MOSFET BSC520N15NS3 G has a voltage rating of 150V and a current rating of 21A with a typical on-resistance of 52mOhm | INFINEON | Active | 3~7 Days | 4,642 | |
| BSC320N20NS3 G | channel transistor | INFINEON | Active | 3~7 Days | 5,157 | |
| BSC070N10NS3 G | Robust and efficient power converter component for industrial systems | INFINEON | Active | 3~7 Days | 5,562 | |
| BSC060P03NS3E G | OptiMOS P3 Series Power MOSFET, -30V Voltage Rating, -100A Current Rating, TDSON-8 Package | INFINEON | Active | 3~7 Days | 3,007 | |
| BSC030P03NS3 G | 8-pin TDSON EP packaged P-channel MOSFET transistor rated for 30V and 25.4A in tape and reel packaging | INFINEON | Active | 3~7 Days | 4,913 | |
| BSC046N10NS3GATMA1 | High-powered N-channel MOSFET operating at 100V and 100A, with TDSON-8 packaging | Infineon Technologies | OBSOLETE | 3~7 Days | 9,799 | |
| BSC060N10NS3 G | Transistor MOSFET N-channel with 100V voltage and 14.9A current in 8-pin TDSON EP package on reel | INFINEON | Active | 3~7 Days | 7,434 | |
| BSC0580NS | BSC0580NS is a power management IC chip designed for automotive applications. | Infineon | 3~7 Days | 3,807 | ||
| BSC028N06LS3 G | Resistance: 0.0028 ohm | INFINEON | Active | 3~7 Days | 7,408 | |
| BSC750N10ND | MOSFET 2N-CH 100V 3.2A 8TDSON | INFINEON | 3~7 Days | 5,512 | ||
| BSC042NE7NS3 G | MOSFET N-CH 75V 19A/100A TDSON | INFINEON | Active | 3~7 Days | 7,012 | |
| BSC252N10NSF G | IGBT Transistors MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | INFINEON | Active | 3~7 Days | 3,204 | |
| BSC020N03LS G | MOSFET N-CH 30V 28A/100A TDSON | INFINEON | Active | 3~7 Days | 7,834 | |
| BSC016N04LS G | MOSFET N-CH 40V 31A/100A TDSON | INFINEON | Active | 3~7 Days | 5,363 | |
| BSC059N04LS G | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | INFINEON | Active | 3~7 Days | 4,151 | |
| BSC031N06NS3 G | MOSFET N-CH 60V 100A TDSON-8-1 | INFINEON | Active | 3~7 Days | 3,123 | |
| BSC190N15NS3 G | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | INFINEON | 3~7 Days | 5,252 | ||
| BSC340N08NS3 G | MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3 | INFINEON | Active | 3~7 Days | 3,634 | |
| BSC190N12NS3 G | Trans MOSFET N-CH 120V 8.6A 8-Pin TDSON T/R (Alt: BSC190N12NS3 G) | INFINEON | Active | 3~7 Days | 7,646 | |
| BSC670N25NSFDATMA1 | Specifications for the BSC670N25NSFDATMA1 MOSFET include a null threshold voltage, indicating its suitability for specific applications | Infineon Technologies | ACTIVE | 3~7 Days | 7,805 | |
| BSC040N10NS5ATMA1 | N-channel Power MOSFET suitable for automotive applications, with a voltage rating of 100V and a current handling capacity of 100A | Infineon Technologies | Active | 3~7 Days | 5,916 | |
| BSC098N10NS5ATMA1 | OptiMOS 5 power transistor MOSFET designed for 100V operation | Infineon Technologies | ACTIVE | 3~7 Days | 9,540 | |
| BSC050N10NS5ATMA1 | 5MOHM, 100V, 100A, N-CHANNEL, SuperSO8 | Infineon Technologies | ACTIVE | 3~7 Days | 6,237 | |
| IPG20N10S4L22AATMA1 | N-channel MOSFET designed for automotive applications | Infineon Technologies | ACTIVE | 3~7 Days | 9,947 | |
| BSC028N06NSATMA1 | Product BSC028N06NSATMA1 is a Transistor MOSFET N-Channel with a 60V rating, capable of handling currents up to 100A | Infineon Technologies | ACTIVE | 3~7 Days | 5,123 | |
| IPG20N04S4L11ATMA1 | MOSFET MOSFET_(20V 40V) | Infineon Technologies | Active | 3~7 Days | 9,322 | |
| BSC010NE2LSATMA1 | Transistor BSC010NE2LSATMA1 is a N-channel MOSFET designed for a voltage of 25V and a current of 39A | Infineon Technologies | ACTIVE | 3~7 Days | 8,574 | |
| BSC030P03NS3GAUMA1 | Transistor: P-MOSFET | Infineon Technologies | ACTIVE | 3~7 Days | 6,032 | |
| BSC109N10NS3GATMA1 | OptiMOS™ Power Mosfet with 26 nC | Infineon Technologies | Active | 3~7 Days | 9,499 | |
| BSC123N08NS3GATMA1 | 80V Silicon Metal-oxide Semiconductor FET with 11A Drain Current, 0.0123ohm Resistance, N-Channel Configuration, TDSON-8 Package in Green Plastic | Infineon Technologies | 3~7 Days | 9,775 | ||
| BSC340N08NS3GATMA1 | -pin TDSON EP package MOSFET designed for automotive use | Infineon Technologies | Active | 3~7 Days | 9,667 | |
| BSC047N08NS3GATMA1 | Transistor MOSFET with N-type channel capable of handling 80 volts and 18 amps in a bulk packaging | Infineon Technologies | ACTIVE | 3~7 Days | 7,808 |
Additional Package/Case