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TSOP-44 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| CY7C1041DV33-10ZSXI | Access time: 10 ns | Infineon | Active | 3~7 Days | 3,053 | |
| CY7C1041D-10ZSXI | With a compact 44-pin TSOP-II package, this SRAM chip offers a convenient and space-saving solution for memory storage | Infineon | Active | 3~7 Days | 7,510 | |
| K6X4016T3F-TF70 | This product is a high-performance SRAM chip with a capacity of 256KX16 and operates at a speed of 70ns, utilizing CMOS technology | Samsung Semiconductor | 3~7 Days | 5,400 | ||
| K6R4016V1D-TC10 | A PDSO44-packaged CMOS static RAM | Olimex Ltd. | Discontinued | 3~7 Days | 5,925 | |
| K6R4016V1D-UI10 | Lead-free TSOP2-44 package | Samsung Electro-Mechanics | Discontinued | 3~7 Days | 7,723 | |
| IS61C25616AL-10TLI | With a 10ns access time, this SRAM chip offers quick retrieval and storage of information | Issi, Integrated Silicon Solution Inc | 3~7 Days | 3,654 | ||
| IS61LV51216-10TLI | 512KX16 high-speed RAM module | Issi, Integrated Silicon Solution Inc | 3~7 Days | 5,491 | ||
| CY7C1049DV33-10ZSXI | TSOP2-44 configuration for easy installation and use | Infineon Technologies | Active | 3~7 Days | 6,335 | |
| TC58V64AFT | TC58V64AFT is a flash memory chip that has a 64Mb storage capacity | TOSHIBA | 3~7 Days | 4,326 | ||
| K6X8008C2B-UF55 | SRAM | SAMSUNG | 3~7 Days | 4,056 | ||
| K6X8016T3B-TF55 | Standard SRAM, 512KX16, 55ns, CMOS, PDSO44 | SAMSUNG | 3~7 Days | 5,139 | ||
| K6X4016C3F-UF55 | SRAM | SAMSUNG | 3~7 Days | 5,637 | ||
| IS61LV51216-10TI | Ideal for high-speed computing applications such as gaming and graphics processing | Issi, Integrated Silicon Solution Inc | Obsolete | 3~7 Days | 6,236 | |
| IS41LV16100C-50TLI | High performance EDO DRAM with asynchronous operation and 50ns speed | Issi | 3~7 Days | 6,104 | ||
| IS61LV6416-10TLI | The IS61LV6416-10TLI is a TSOPII-44-10.2mm SRAM ROHS component | Issi | 3~7 Days | 4,117 | ||
| CY7C1041CV33-10ZSXA | Available for immediate shipment | Infineon | Active | 3~7 Days | 7,130 | |
| K6R4008C1D-UI10 | This product is a standard SRAM chip with a capacity of 512Kx8 and a fast access time of 10ns." | Samsung Semiconductor | 3~7 Days | 5,817 | ||
| IS62WV51216BLL-55TLI | 512K x 16 55ns 44-Pin TSOP-II SRAM Chip Async Single 3.3V 8M-bit | Issi | ACTIVE | 3~7 Days | 9,177 | |
| CY7C1041DV33-10ZSXIT | Suitable for various electronic applications such as networking devices and telecommunications equipment | Infineon Technologies | Active | 3~7 Days | 4,793 | |
| IS41LV16100B-50TLI | Integrated Circuit offering 16 million bits of dynamic random-access memory | ISSI | 3~7 Days | 6,710 | ||
| IS41LV16100B-50TL | This product is an EDO DRAM with a capacity of 1 megabyte by 16 bits, operating at a speed of 50 nanoseconds | Issi, Integrated Silicon Solution Inc | 3~7 Days | 5,785 | ||
| IS61LV25616AL-10T | 3.3v SRAM with 10ns access time and 4Mb capacity | Issi, Integrated Silicon Solution Inc | Obsolete | 3~7 Days | 4,780 | |
| CY7C1041CV33-12ZXC | With its impressive 4Mbit capacity, this chip is perfect for developers seeking enhanced data storage solutions | CYPRESS | 3~7 Days | 5,758 | ||
| IS61WV51216EDBLL-10TLI | Single 2.5V/3.3V Operation | Issi, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 5,298 | |
| CY7C1041GN-10ZSXI | This SRAM product, CY7C1041GN-10ZSXI, conforms to ROHS standards and comes in a TSOPII-44 package." | Cypress Semiconductor Corp | ACTIVE | 3~7 Days | 9,011 | |
| CY7C1049G30-10ZSXI | 4 Mb Fast SRAM, 512 K x 8, TSOP-44 package | Infineon | 3~7 Days | 6,604 | ||
| IS61LV25616AL-10TI | SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v | Issi, Integrated Silicon Solution Inc | 3~7 Days | 500 | ||
| IS61WV25616BLL | 4Mb High-Speed/Low Power SRAM | ISSI | 3~7 Days | 3,461 | ||
| R1LV0414DSB-5SI | SRAM memory module with 256 kilobytes capacity and 16 data lines | Renesas Electronics | 3~7 Days | 6,761 | ||
| MB85R4M2T | MB85R4M2T chip is a non-volatile ferroelectric RAM with 4Mbit capacity, ideal for applications requiring high endurance and low power consumption. | FUJITSU | 3~7 Days | 6,091 | ||
| KM48S2020CT-G10 | Synchronous DRAM, 2MX8, 7ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 | SAMSUNG | 3~7 Days | 6,147 | ||
| K6R4016C1D-TI10 | Standard SRAM, 256KX16, 10NS, Cmos, PDSO44, 0.400 Inch, TSOP2-44 | SAMSUNG | 3~7 Days | 7,662 | ||
| IS61LV25616-10T | Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, TSOP2-44 | ISSI | 3~7 Days | 5,974 | ||
| IS62C25616EL-45TLI | 56Kx16 Low Voltage, Ultra Low Power CMOS Static RAM | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,456 | |
| IS66WV51216EBLL-70TLI | PSRAM Async Single Port 8M-bit 512K x 16 70ns 44-Pin TSOP-II | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 6,310 | |
| MR0A16ACYS35 | Parallel interface MRAM | Everspin Technologies | ACTIVE | 3~7 Days | 9,056 | |
| IS61WV10248EDBLL-10TLI | SRAM Chip Async Single 2.5V/3.3V 8M-bit 1M x 8 10ns 44-Pin TSOP-II | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 5,328 | |
| FM21L16-60-TG | Integrated Circuit | Infineon | OBSOLETE | 3~7 Days | 7,684 | |
| IS64WV51216EDBLL-10CTLA3 | SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns Automotive AEC-Q100 44-Pin TSOP-II | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 6,157 | |
| MR0A08BYS35 | Parallel interface | Everspin Technologies | ACTIVE | 3~7 Days | 5,134 |
Additional Package/Case