K6R4008C1D-UI10

Name: K6R4008C1D-UI10
Rating: 4.5 (10 reviews)

This product is a standard SRAM chip with a capacity of 512Kx8 and a fast access time of 10ns."

5,817 Effective Inventory

K6R4008C1D-UI10

Effective Inventory5,817

This product is a standard SRAM chip with a capacity of 512Kx8 and a fast access time of 10ns."

Manufacturer Part # : K6R4008C1D-UI10
Package/Case: TSOP-44
Brand: Samsung Semiconductor
Product Categories : Memory

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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K6R4008C1D-UI10 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for K6R4008C1D-UI10 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

When it comes to memory solutions, the K6R4008C1D-UI10 shines as a top-tier SDRAM chip known for its exceptional capabilities. With a storage capacity of 4 megabits, equivalent to 512 kilobytes, this chip offers ample space for storing critical data in a fast and efficient manner. Operating at a supply voltage of 3.3 volts, it delivers reliable performance and supports high-speed data transfer rates ranging from 133 to 166 MHz. The chip's innovative 4-bank architecture optimizes data access and storage, making it a reliable choice for demanding computing tasks. The designation of "C1D" likely signifies key features or revisions that further enhance the chip's overall performance and functionality

Key Features

The K6R4008C1D-UI10 features a capacity of 4 megabits.
It operates at a speed of 100 MHz with high performance.
This chip is organized as 256K words by 16 bits for efficient data storage.
The K6R4008C1D-UI10 is manufactured by Samsung for reliable usage.
This SDRAM chip supports fast data transfer and retrieval.
Its housing in a 44-pin TSOP-II package ensures easy integration with PCBs.

Application

High-speed RAM for networking
Efficient memory for automation
Low power consumption solution

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	Yes	Rohs Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	3A991.B.2.A	HTS Code !	8542.32.00.41
Access Time-Max	10 ns	I/O Type	COMMON
JESD-30 Code	R-PDSO-G44	JESD-609 Code	e1
Length	18.41 mm	Memory Density	4194304 bit
Memory IC Type	STANDARD SRAM	Memory Width	8
Moisture Sensitivity Level	3	Number of Functions	1
Number of Terminals	44	Number of Words	524288 words
Number of Words Code	512000	Operating Mode !	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	512KX8	Output Characteristics	3-STATE
Package Body Material	PLASTIC/EPOXY	Package Code	TSOP2
Package Equivalence Code	TSOP44,.46,32	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE, THIN PROFILE	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	260	Power Supplies !	5 V
Qualification Status !	Not Qualified	Seated Height-Max	1.2 mm
Standby Current-Max	0.005 A	Standby Voltage-Min	4.5 V
Supply Current-Max	0.075 mA	Supply Voltage-Max (Vsup)	5.5 V
Supply Voltage-Min (Vsup)	4.5 V	Supply Voltage-Nom (Vsup)	5 V
Surface Mount !	YES	Technology	CMOS
Temperature Grade !	INDUSTRIAL	Terminal Finish	TIN SILVER COPPER
Terminal Form !	GULL WING	Terminal Pitch !	0.8 mm
Terminal Position	DUAL	Width	10.16 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification K6R4008C1D-UI10 PDF Download

FAQs

What is K6R4008C1D-UI10?

The K6R4008C1D-UI10 is a 512K x 8-bit high-speed static random access memory (SRAM) manufactured by Samsung Electronics. It is designed for applications requiring fast and reliable data storage and retrieval, such as cache memory, networking equipment, and high-performance computing systems.

How Does K6R4008C1D-UI10 Work?

The K6R4008C1D-UI10 works by storing data in a volatile memory array that can be accessed randomly at high speeds. It retains data as long as power is supplied and offers fast read and write operations. The SRAM is ideal for applications that demand quick access to data without the latency associated with dynamic RAM.

How Many Pins does K6R4008C1D-UI10 have and What are the Functions of the Pinout Configuration?

The K6R4008C1D-UI10 is housed in a 32-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

Vcc: Power supply pin.
GND: Ground pin.
OE, CE: Output Enable and Chip Enable pins for controlling data output and device operation.
A0-A18: Address pins for selecting memory locations.
DQ0-DQ7: Data input/output pins for 8-bit data transfer.
WE: Write Enable pin for initiating write operations.

What are the Pros and Cons of K6R4008C1D-UI10?

Pros:

High-Speed Operation: Provides fast access times for efficient data processing.
Reliability: Offers non-volatile storage of data without the need for constant refresh.
Low Power Consumption: Operates with low power requirements, suitable for energy-efficient systems.
Compatibility: Interfaces easily with microcontrollers and other digital devices.
Compact Form Factor: The 32-pin TSOP package is compact and suitable for space-constrained designs.

Cons:

Volatility: Data is lost when power is interrupted, requiring backup solutions for critical information.
Cost: SRAM memory can be more expensive than other types of memory technologies.
Limited Capacity: SRAM typically offers lower storage capacity compared to other memory types like DRAM or Flash.

Are There Any Equivalents/Alternatives to K6R4008C1D-UI10 for Recommendation?

The CY62128EV30LL-45ZSXI from Cypress Semiconductor is a similar 128K x 8-bit SRAM with comparable specifications.
Alternatives to the K6R4008C1D-UI10 include the AS6C1008-55SIN from Alliance Memory and the IS61C256AH-20N from Integrated Silicon Solution, Inc. (ISSI).