IS61LV25616AL-10T

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3.3v SRAM with 10ns access time and 4Mb capacity

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Service & Packaging

Service & Packaging

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IS61LV25616AL-10T DataSheet

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Please submit RFQ for IS61LV25616AL-10T or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The IS61LV25616AL-10T stands out as a high-performance, low-power CMOS static RAM, offering 256Kx16 organization and a speedy 10ns access time. With its power-saving standby mode and 3.3V supply voltage, this chip delivers both performance and efficiency, making it a suitable choice for a wide range of demanding applications. Whether used in consumer electronics, industrial equipment, or telecommunications devices, the IS61LV25616AL-10T provides reliable memory access and contributes to overall system responsiveness

Key Features

  • High-speed access time:
  • — 10, 12 ns
  • CMOS low power operation
  • Low stand-by power:
  • — Less than 5 mA (typ.) CMOS stand-by
  • TTL compatible interface levels
  • Single 3.3V power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
  • Lead-free available
Issi, Integrated Silicon Solution Inc Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS N
Memory Size ! 4 Mbit Organization 256 k x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 3.135 V
Supply Current - Max 100 mA Minimum Operating Temperature 0 C
Maximum Operating Temperature ! + 70 C Mounting Style SMD/SMT
Package / Case TSOP-44 Brand ISSI
Data Rate ! SDR Moisture Sensitive Yes
Number of Ports ! 1 Product Type ! SRAM
Factory Pack Quantity 135 Subcategory Memory & Data Storage
Type Asynchronous

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IS61LV25616AL-10T PDF Download

FAQs

What is IS61LV25616AL-10T?

The IS61LV25616AL-10T is a 256K x 16 high-speed CMOS static RAM (SRAM) integrated circuit manufactured by Integrated Silicon Solution, Inc. It operates at a speed of 10ns, making it suitable for applications requiring fast access times and high reliability, such as cache memory, networking equipment, and embedded systems.

How Does IS61LV25616AL-10T Work?

The IS61LV25616AL-10T functions as a volatile memory device that stores data temporarily as long as power is supplied. It employs a static random access memory architecture, allowing for rapid access to stored data without the need for refresh cycles. The SRAM maintains data as long as power is available, providing quick read and write operations.

How Many Pins does IS61LV25616AL-10T have and What are the Functions of the Pinout Configuration?

The IS61LV25616AL-10T is packaged in a 44-pin TSOP (Thin Small Outline Package). The pinout configuration includes:

  • VCC, VSS: Power supply pins for VCC (Positive power) and VSS (Ground).
  • Address Pins (A0-A17): Used for specifying the memory location to read from or write to.
  • Data In/Out (DQ0-DQ15): Bi-directional data pins for transferring data to and from the memory array.
  • Chip Enable (CE1, CE2): Chip enable pins for activating the memory chip.
  • Output Enable (OE): Output enable pin for enabling the data output buffer.
  • Write Enable (WE): Write enable pin for initiating write operations.

What are the Pros and Cons of IS61LV25616AL-10T?

Pros:

  • High Speed: Operates at 10ns access time for fast read and write operations.
  • High Reliability: Offers stable data retention without the need for periodic refreshing.
  • Low Power Consumption: Consumes low power, suitable for battery-operated devices.
  • Wide Operating Voltage: Supports a wide voltage range for compatibility with various systems.
  • Easy Integration: Compatible with standard SRAM interfaces, facilitating integration into existing designs.

Cons:

  • Higher Cost: Higher density and speed SRAM devices like the IS61LV25616AL-10T may come at a higher cost.
  • Limited Storage Capacity: 256K x 16 configuration may not be sufficient for some high-density storage applications.
  • Complex Interface: Requires careful attention to timing and voltage levels for proper operation.

Are There Any Equivalents/Alternatives to IS61LV25616AL-10T for Recommendation?

  • Similar products to the IS61LV25616AL-10T include the CY7C1041DV33 from Cypress and the AS6C4008 from Alliance Memory.
  • Alternatives to the IS61LV25616AL-10T include the KM62256CLP from Samsung and the M48Z02-200PC1 from STMicroelectronics.

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