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TSOP-44 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| IS66WV51216EBLL-55TLI | With a storage capacity of 8M-bit, the IS66WV51216EBLL-55TLI PSRAM provides reliable performance in a compact 44-pin TSOP-II package | Issi, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,071 | |
| IS66WV51216EBLL-70TLI-TR | High-performance memory solution for industrial and automotive applications | Issi | 3~7 Days | 3,213 | ||
| MR4A08BYS35R | The MRBYSR features a parallel interface and operates at , making it suitable for use in various applications such as automotive and industrial | Everspin Technologies | 3~7 Days | 7,288 | ||
| MR0A08BCYS35R | Reliable and efficient, this bit TSOP-RAM is designed to meet your computing needs | Everspin Technologies | 3~7 Days | 3,103 | ||
| MR2A16AVYS35R | Exceptionally fast and energy-efficient MRAM memory technology suitable for a wide range of industrial control systems and IoT devices | Everspin Technologies | 3~7 Days | 4,345 | ||
| IS61WV25616BLL-10TL | Ideal for various voltage ranges | Issi, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 5,607 | |
| MR0A16AYS35 | MRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM | Everspin Technologies Inc. | ACTIVE | 3~7 Days | 7,553 | |
| MR2A16AYS35R | Flexible, scalable memory component suitable for a wide range of applications including IoT and robotics | Everspin Technologies | 3~7 Days | 2,611 | ||
| MR2A16AVYS35 | 3.3V 44-Pin TSOP-II Tray MRAM | Everspin Technologies | ACTIVE | 3~7 Days | 8,776 | |
| MR4A08BUYS45R | 16Mbit Non-Volatile Random Access Memory Magnetic Random Access Memory | Everspin Technologies Inc. | ACTIVE | 3~7 Days | 7,432 | |
| MR0A16AVYS35 | Its low power consumption and high endurance make it suitable for use in various industrial control system | Everspin Technologies | 3~7 Days | 6,227 | ||
| MR2A08ACYS35R | Parallel interface MRAM offers high-performance data transfer and secure storage capabilities | Everspin Technologies | 3~7 Days | 6,452 | ||
| IS61LV5128AL-10TLI-TR | This is a 4-megabit SRAM module | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,220 | |
| FM21L16-60-TGTR | Parallel interface for fast data transfer | Infineon Technologies | 3~7 Days | 2,169 | ||
| IS66WV25616BLL-55TLI | Compact and powerful 256K x 16-bit SRAM with fast access time | Issi | 3~7 Days | 7,041 | ||
| MR2A08AMYS35 | High-speed parallel interface MRAM for automotive use | Everspin Technologies | ACTIVE | 3~7 Days | 5,816 | |
| IS64C6416AL-15TLA3 | Advanced SRAM technology ensures low power consumption and improved reliability | Issi | 3~7 Days | 7,472 | ||
| IS66WV51216BLL-55TLI-TR | Advanced memory technology features a single port design, 55ns access time, and 44-pin TSOP-II package for efficient data transfer | Issi | 3~7 Days | 4,854 | ||
| IS61WV12816BLL-12TLI | Advanced SRAM technology for fast and secure data storage | Issi | 3~7 Days | 5,385 | ||
| MR2A16AMYS35 | MR2A16A Series 4 Mb (256 K x 16) 3.6 V 35 ns SMT MRAM Memory - TSOP2-44 | Everspin Technologies | ACTIVE | 3~7 Days | 9,958 | |
| MB85R4M2TFN-G-JAE2 | Next-generation memory technology widely compatible with various devices | Fdk America, Inc., A Member Of Fujitsu Group | ACTIVE | 3~7 Days | 5,582 | |
| CY62146EV30LL-45ZSXA | High-performance memory for demanding applications, featuring a fast access time of n | Infineon | 3~7 Days | 2,606 | ||
| MR4A08BUYS45 | 16Mbit TSOP-442 RAM, ROHS-compliant | Everspin Technologies | ACTIVE | 3~7 Days | 7,001 | |
| MR2A16AYS35 | 256Kx16 configuration | Everspin Technologies Inc. | ACTIVE | 3~7 Days | 5,810 | |
| IS66WV51216DBLL-70TLI | PSRAM Async Single Port 8M-bit memory with a capacity of 512K x 16, featuring a 70ns access time, and housed in a 44-Pin TSOP-II package | ISSI, Integrated Silicon Solution Inc | OBSOLETE | 3~7 Days | 7,551 | |
| MR2A16AMYS35R | High-capacity memory module ideal for industrial automation and data logging applications | Everspin Technologies | 3~7 Days | 3,926 | ||
| AS6C8008A-45ZIN | Asynchronous Memory IC with 8 Megabit Capacity, Parallel Interface, 45 ns Access Time, and 44-TSOP II Package | Alliance | 3~7 Days | 4,330 | ||
| R1LV0816ASB-5SI#S0 | SRAM 8MB Advanced Static Random Access Memory x16 55 Nanoseconds Temperature-Stabilized Thin Small Outline Package Industrial-Temperature 3 Volts | Renesas Electronics America Inc | 3~7 Days | 6,141 | ||
| 71V416S15PHGI | This product, designated as 71V416S15PHGI, belongs to the 71V416S Series | Renesas Electronics America Inc | 3~7 Days | 5,509 | ||
| 71V416S15PHG | 56Kx16 ASYNCHRONOUS CMOS SRAM | Renesas Electronics America Inc | ACTIVE | 3~7 Days | 5,011 | |
| CY7C1049CV33-8ZSXC | Ready to be shipped today | Infineon Technologies | OBSOLETE | 3~7 Days | 8,100 | |
| CY7C1051DV33-12ZSXI | x -bit architecture enables efficient storage and processing of large datasets in real-time | Infineon | 3~7 Days | 7,187 | ||
| CY62158EV30LL-45ZSXI | High-speed 1Mx8 memory | Infineon Technologies | ACTIVE | 3~7 Days | 7,198 | |
| CY7C1021CV33-12ZSXE | Automotive grade component with 12ns speed | Infineon Technologies | OBSOLETE | 3~7 Days | 8,175 | |
| CY14B104NA-ZS45XI | CY14B104NA-ZS45XI is a 3V NVSRAM for data storage | Cypress Semiconductor Corp | ACTIVE | 3~7 Days | 8,124 | |
| CY7C1059DV33-10ZSXIT | Asynchronous single 3 | Infineon Technologies | OBSOLETE | 3~7 Days | 8,868 | |
| CY7C1041GE30-10ZSXIT | Single asynchronous SRAM chip with a capacity of 4 megabits | Infineon Technologies | ACTIVE | 3~7 Days | 6,086 | |
| CY62126EV30LL-45ZSXI | TSOPII-44 SRAM ROHS - CY62126EV30LL-45ZSXI | Infineon Technologies | ACTIVE | 3~7 Days | 9,273 | |
| CY62137EV30LL-45ZSXIT | 2 Megabyte low-power static random-access memory (SRAM) operating at 3 volts with a speed of 45 nanoseconds, organized as 128 kilobytes by 16 bits | Infineon Technologies | ACTIVE | 3~7 Days | 6,221 | |
| CY7C1021D-10ZSXI | High-speed 2Mb SRAM with 64K x 16 Organization | Infineon Technologies | ACTIVE | 3~7 Days | 8,399 |
Additional Package/Case