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BSC028N06LS3 G
Resistance: 0.0028 ohm
BSC028N06LS3 G
Resistance: 0.0028 ohm
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BSC028N06LS3 G DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $1.573 | $1.57 |
| 10 | $1.356 | $13.56 |
| 30 | $1.220 | $36.60 |
| 100 | $1.081 | $108.10 |
| 500 | $1.018 | $509.00 |
| 1000 | $0.989 | $989.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The BSC028N06LS3 G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and high power applications. It is categorized as an N-Channel MOSFET with a maximum voltage rating of 60V and a continuous drain current rating of 23A at a case temperature of 25 degrees Celsius. Additionally, it can handle a maximum drain current of 100A when the case temperature is maintained at a safe level. In terms of power dissipation, the BSC028N06LS3 G has a maximum power dissipation of 2.5W when the ambient temperature is 25 degrees Celsius, and a maximum power dissipation of 139W when the case temperature is kept within safe operating limits. This MOSFET is designed for surface mount applications and comes in a PG-TDSON-8-1 package, which is a thermally enhanced package that allows for efficient heat dissipation. The compact and easy-to-mount package makes it suitable for a wide range of electronic devices and applications where space is limited.
Key Features
- Low ON-resistance
- Fast switching performance
- High efficiency
- Low gate charge
- Improved thermal resistance
- Enhanced avalanche energy capability
Application
- Power management systems
- Battery management systems
- Motor control applications
- Industrial automation
- Robotics
- Electronic load control
- Switched-mode power supplies
- Renewable energy
- Electric vehicles
- Uninterruptible power supplies
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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