BSM15GD120DN2E3224
Insulated Gate Bipolar Transistor with N-Channel design, 25A I(C), and 1200V V(BR)CES packaged in ECONOPACK-17BSM15GD120DN2E3224
Insulated Gate Bipolar Transistor with N-Channel design, 25A I(C), and 1200V V(BR)CES packaged in ECONOPACK-17
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Manufacturer Part # : BSM15GD120DN2E3224
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Package/Case: EconoPACK 2
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Part Status : End Of Life
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Brand: Infineon
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Product Categories : IGBT Modules
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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About Payment
We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BSM15GD120DN2E3224 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $147.453 | $147.45 |
200 | $57.062 | $11,412.40 |
500 | $55.058 | $27,529.00 |
1000 | $54.068 | $54,068.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
Featuring low switching loss and high thermal performance, the BSM15GD120DN2E3224 is a versatile and reliable solution for high-frequency switching applications. Whether used in inverters, motor drives, or other high-power electronic systems, this module excels at delivering efficient and consistent power with minimal energy loss. Its exceptional thermal properties further ensure long-term reliability and performance, making it a valuable asset for demanding industrial applications
![](/files/uploads/product/b/f2b6c2a8fd224d63b66aafa5016b602b.webp)
Key Features
- Part Number: BSM15GD120DN2E3224
- Manufacturer: Infineon Technologies
- Module type: IGBT Power Module
- Current rating: 15A
- Voltage rating: 1200V
- Features: High power density, low thermal resistance, low VCE(sat), fast switching speed
Application
- Robust construction
- Long-lasting quality
- Efficient operation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category ! | IGBT Modules |
RoHS | Details | Product | IGBT Silicon Modules |
Configuration | Full Bridge | Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 2.5 V | Continuous Collector Current at 25 C | 25 A |
Gate-Emitter Leakage Current | 150 nA | Pd - Power Dissipation | 145 W |
Package / Case | EconoPACK 2 | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature ! | + 150 C | Brand | Infineon Technologies |
Height | 17 mm | Length | 107.5 mm |
Maximum Gate Emitter Voltage | 20 V | Mounting Style | Chassis Mount |
Product Type ! | IGBT Modules | Factory Pack Quantity | 10 |
Subcategory | IGBTs | Technology | Si |
Width | 45 mm | Part # Aliases | BSM15GD120DN2E3224BOSA1 SP000100360 BSM15GD120DN2E3224BOSA1 |
Unit Weight | 9.782704 oz |
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