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BSS123NH6433XTMA1
SOT-23-3 packaged MOSFET with 100V VDS and 190mA ID
BSS123NH6433XTMA1
SOT-23-3 packaged MOSFET with 100V VDS and 190mA ID
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BSS123NH6433XTMA1 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5 | $0.125 | $0.62 |
| 50 | $0.102 | $5.10 |
| 150 | $0.090 | $13.50 |
| 500 | $0.080 | $40.00 |
| 2500 | $0.073 | $182.50 |
| 5000 | $0.069 | $345.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The BSS123N3 is a N-channel enhancement-mode MOSFET.Features• Low on-resistance• High speed switching• Low-voltage drive(2.5V)• Easily designed drive circuits• Pb-free lead plating and halogen-free package
Key Features
- Low on-resistance
- High speed switching
- Low-voltage drive(2.5V)
- Easily designed drive circuits
- Pb-free lead plating and halogen-free package
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 44 Weeks, 4 Days | Additional Feature ! | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 0.19 A | Drain-source On Resistance-Max | 6 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 3.1 pF |
| JESD-30 Code | R-PDSO-G3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Reference Standard | AEC-Q101 |
| Surface Mount ! | YES | Terminal Form ! | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON | Manufacturer | Infineon |
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 190 mA | Rds On - Drain-Source Resistance | 2.4 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.4 V |
| Qg - Gate Charge | 600 pC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 500 mW |
| Channel Mode | Enhancement | Qualification | AEC-Q101 |
| Series | BSS123 | Brand | Infineon Technologies |
| Fall Time | 22 ns | Forward Transconductance - Min | 410 mS |
| Height | 1.1 mm | Length | 2.9 mm |
| Product Type ! | MOSFET | Rise Time ! | 3.2 ns |
| Factory Pack Quantity | 10000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 7.4 ns |
| Typical Turn-On Delay Time | 2.3 ns | Width | 1.3 mm |
| Part # Aliases | BSS123N H6433 SP000939268 | Unit Weight | 0.000282 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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