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SOT-23-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| BS250FTA | Field Effect Transistor with P-Channel and a voltage capacity of 45V | Diodes Incorporated | 3~7 Days | 6,580 | ||
| BSH103,215 | 30V N-channel MOSFET transistor rated for 0.85A | Nexperia | 3~7 Days | 6,078 | ||
| BAR43S | Schottky 30V 200mA | Onsemi | 3~7 Days | 5,514 | ||
| 2SC3265 | General Purpose Small Signal | Toshiba | 3~7 Days | 4,410 | ||
| SI2323DS-T1-GE3 | Details: SI2323DS-T1-GE3 MOSFETs with 20V voltage rating in SOT-23 package | Vishay | 3~7 Days | 4,555 | ||
| REF2912AIDBZT | 1.25-V, 100-ppm/°C, 50-µA in 3-pin SOT-23 package series (bandgap) voltage reference 3-SOT-23 -40 to 125 | Texas Instruments | 3~7 Days | 5,038 | ||
| DRV5053EAQDBZT | High voltage (up to 38V), linear hall effect sensor 3-SOT-23 -40 to 125 | Texas Instruments | 3~7 Days | 7,174 | ||
| DRV5053EAQDBZR | Hall Effect Sensor Bipolar 3.3V/5V/9V/12V/15V/18V/24V 3-Pin SOT-23 T/R | Texas Instruments | ACTIVE | 3~7 Days | 7,602 | |
| BSS138L | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, 3000-REEL | Onsemi | 3~7 Days | 5,736 | ||
| DT1452-02SO-7 | 5V 5A 11Vc Voltage Protection | Diodes Incorporated | Active | 3~7 Days | 7,682 | |
| SI3404-TP | 30V, 5.8A N-Channel MOSFET with 28mΩ resistance at 10V | Micro Commercial Components | 3~7 Days | 7,332 | ||
| SQ2361ES-T1-GE3 | P-Channel MOSFET with a 60V rating, capable of handling currents up to 2 | Vishay | 3~7 Days | 3,135 | ||
| SI2305DS-T1-E3 | General Purpose Power FET | Vishay | 3~7 Days | 4,431 | ||
| PDTC143XT,215 | Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R | NEXPERIA | ACTIVE | 3~7 Days | 6,434 | |
| NX3008NBK,215 | N-channel Trench MOSFET rated at 30 V and 400 mA | Nexperia | Active | 3~7 Days | 3,100 | |
| MAX809SEUR-T | Small form factor voltage detector with precise output voltage of +2.93V | MAXIM | OBSOLETE | 3~7 Days | 4,693 | |
| SI2319DS-T1-E3 | 0.082 ohm on-resistance and 0.75W power dissipation capability | Vishay | Active | 3~7 Days | 3,580 | |
| PESD2CAN,215 | PESD Series 2 Channel Bi-Directional CAN Bus ESD Protection Diode - SOT-23 | Nexperia | 3~7 Days | 4,717 | ||
| PESD1CAN,215 | Bi-Directional ESD protection diode | Nexperia | 3~7 Days | 4,493 | ||
| BAT54S,215 | Schottky Diodes & Rectifiers BAT54S/SOT23/TO-236AB | Nexperia | 3~7 Days | 4,869 | ||
| TSM3401CX | P-channel MOSFET with a 30V rating | Taiwan Semiconductor | Active | 3~7 Days | 7,176 | |
| FMMT417TD | FMMT417TD Transistor: NPN General Purpose Bipolar Junction Transistor rated for 100V and 0 | Diodes Incorporated | 3~7 Days | 3,592 | ||
| FMMT722TA | Product code: FMMT722TA, Type: PNP, Voltage rating: 70V, Current rating: 1.5A, Package type: SOT23 | Diodes Incorporated | 3~7 Days | 6,195 | ||
| CDSOT23-T12LC | ESD Suppressor Diode TVS Bi-Dir 12V 3-Pin SOT-23 T/R | Bourns | ACTIVE | 3~7 Days | 5,629 | |
| BAT400D-7-F | BAT400D-7-F belongs to the class of Schottky diodes and rectifiers, featuring a 40V voltage threshold and a 500mW power handling capacity | Diodes Incorporated | Active | 3~7 Days | 7,090 | |
| GSOT05C-GS08 | VISHAY GSOT05C-GS08 TVS diode array, 504W, 5V, SOT-23, full reel | Vishay | 3~7 Days | 4,468 | ||
| SI2318DS-T1-E3 | Low power consumption of 750mW with 3.9A at 3V | Vishay | Active | 3~7 Days | 3,517 | |
| SI2333DS-T1-E3 | This MOSFET has a power dissipation of 1.25W and an on-state resistance of 32 milliohms at 4.5V | Vishay | Active | 3~7 Days | 3,038 | |
| FM50S3X | Low-Voltage Positive Slope with Offset Analog Temp Sensor for LM50 applications | Onsemi | 3~7 Days | 3,724 | ||
| SI3400-TP | SOT-23 packaged N-channel MOSFET capable of switching up to 5.8A of current at 30V, supplied in tape and reel for automated assembly | Micro Commercial Components (Mcc) | Active | 3~7 Days | 6,521 | |
| MAX809STRG | MAX809STRG is a compact and efficient solution for maintaining the stability of electronic systems | Onsemi | Active | 3~7 Days | 6,445 | |
| MMBT3904LT3G | Bipolar transistors NPN type with a maximum current rating of 200mA and a voltage rating of 60V | Onsemi | Active | 3~7 Days | 7,829 | |
| MMBTA42LT1G | The MMBTA42LT1G is designed for various electronic applications requiring a small, high-performance transistor | Onsemi | Active | 3~7 Days | 7,761 | |
| MMBTA06LT1G | NPN Silicon Bipolar Transistor, TO-236 Package, 0.5A Collector Current, 80V Breakdown Voltage | Onsemi | Active | 3~7 Days | 7,370 | |
| KST10MTF | 5V 350mW SOT-23 Package | Onsemi | Active | 3~7 Days | 9,532 | |
| BC847CLT1G | NPN General Purpose Transistor with 45V Voltage Rating and 0.1A Current Rating | Onsemi | Active | 3~7 Days | 8,005 | |
| BC817-25LT1G | NPN Bipolar Junction Transistor, 45V Voltage Rating, 0.5A Current Rating, SOT-23 Package, Tape and Reel | Onsemi | Active | 3~7 Days | 7,321 | |
| MMBT3906LT1G | 1-Element Small Signal Bipolar Transistor with 0.2A I(C) and 40V V(BR)CEO in TO-236 Package | Onsemi | Active | 3~7 Days | 6,926 | |
| MMBT3904LT1G | Transistor NPN BJT, General Purpose, 3-Pin SOT-23 Package, 40 Volts, 0.2 Amps, 300mW Power Dissipation, Tape and Reel | Onsemi | Active | 3~7 Days | 9,547 | |
| MMBT2222ALT1G | Bipolar transistors for general purpose applications in a SOT23 package, NPN type with a maximum voltage rating of 40V | Onsemi | Active | 3~7 Days | 6,625 |
Additional Package/Case