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SOT-23-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| SI2305CDS-T1-GE3 | High Current Capability, Low Voltage Operation | Vishay | ACTIVE | 3~7 Days | 9,293 | |
| BC847CL | Transistor BC847CL is an NPN type with a V(BR)CEO of 45V and I(C) of 100mA, housed in a SOT-23 package | Onsemi | 3~7 Days | 6,767 | ||
| RT9058-50GV | SOT-23 Packaged 5V Output Low Dropout Voltage Regulator, 100mA Capacity | RICHTEK | 3~7 Days | 3,955 | ||
| RT9166-12GVL | The RT9166-12GVL is a high-performance LDO with stable output voltage regulation | RICHTEK | 3~7 Days | 6,898 | ||
| MMBV3102LT1G | 3000-reel of Tuning Diode with 30V voltage rating, C3/C25 = 4.5-4.8, in SOT-23 (TO-236) package with 3 leads | Onsemi | 3~7 Days | 4,032 | ||
| MMBV105GLT1G | UHF band variable capacitance diode | Onsemi | 3~7 Days | 6,294 | ||
| MMUN2111LT1 | Trans Digital Bipolar Junction Transistor, PNP, with a voltage rating of 50V and current rating of 100mA | Onsemi | 3~7 Days | 5,055 | ||
| MMBV3401LT1G | Diode optimized for automotive use | Onsemi | 3~7 Days | 6,780 | ||
| MMBV609LT1G | 0V Varactor Diodes with 26pF capacitance | Onsemi | 3~7 Days | 3,520 | ||
| MMBV2109LT1 | 30V Varactor Diodes featuring 29.7pF capacitance - Product MMBV2109LT1 | Onsemi | 3~7 Days | 5,971 | ||
| FDN86501LZ | 60 V, 2.6 A N-Channel Shielded Gate PowerTrench MOSFET FDN86501LZ | Onsemi | 3~7 Days | 6,310 | ||
| MIC2019YM6 | MIC2019YM6 is a power switch IC designed for power distribution applications." | Microchip Technology | Discontinued | 3~7 Days | 3,626 | |
| MMUN2113LT1 | Low-cost, low-noise solution for general-purpose amplificatio | Onsemi | 3~7 Days | 3,719 | ||
| MMUN2214LT1 | MMUN2214LT1: Bipolar Junction Transistor, NPN Type, 50V, 100mA, 400mW, SOT-23 Package | Onsemi | 3~7 Days | 4,097 | ||
| MAX810LEUR-T | MAX810LEUR+T Processor Supervisor IC SOT-23-3 | MAXIM | 3~7 Days | 6,452 | ||
| MAX809MEUR-T | Supervisory Circuits for Monitoring Microprocessor Units | MAXIM | 3~7 Days | 6,763 | ||
| FDN86246 | FDN86246 N-Channel MOSFET | Onsemi | 3~7 Days | 3,372 | ||
| FSB660A | Product FSB660A is a PNP transistor with a voltage rating of -60V and comes in a SOT-23-3 package | Onsemi | 3~7 Days | 7,787 | ||
| FSB560A | Transistor, NPN, 60 Volts, 2 Amps, 500 milliwatts, SOT-23 package, Tape and Reel | Onsemi | 3~7 Days | 5,812 | ||
| MMBD1405 | Small signal diode for switching applications, rated at 200 volts and 0.2 amps, packaged in a 3-pin SOT-23 format for use in reel | Onsemi | 3~7 Days | 5,348 | ||
| MMBD1403 | Available in tape and reel packaging for bulk quantity requirements | Onsemi | 3~7 Days | 6,191 | ||
| MMBD1401 | MMBD1401: SOT-23 Diode Offering 1V Forward Voltage, 200mA Max Current, and 200V Reverse Voltage | Onsemi | 3~7 Days | 4,639 | ||
| FDN028N20 | Channel MOSFET with 20V voltage rating and 6.1A current rating in SOT-23 package | Onsemi | 3~7 Days | 3,974 | ||
| MAX6103EUR-T | With a three terminal design, the MAX6103EUR+T delivers a precise 3V output in a space-saving PDSO3 SOT-23 package with 3 pins | MAXIM | 3~7 Days | 4,527 | ||
| MAX6125EUR-T | This product is a 3-terminal device designed for voltage reference applications | MAXIM | 3~7 Days | 3,358 | ||
| BC807-40LT1 | Silicon PNP Transistor, 500mA, 45V, Small Signal | Onsemi | 3~7 Days | 7,174 | ||
| DMP2130L-7 | DMP2130L-7: A P-channel MOSFET transistor manufactured by Diodes Inc, featuring a 2 | DIODES | Active | 3~7 Days | 4,331 | |
| DMN3052L-7 | With a 1.4W power handling capability, a voltage threshold of 30V, and a current capacity of 5.4A, the DMN3052L-7 MOSFET is a versatile choice | DIODES | 3~7 Days | 3,996 | ||
| DDTC143ZCA-7-F | DDTC143ZCA-7-F is a bipolar junction transistor (BJT) configured as an NPN type, featuring a Base-Resistor-Transistor (BRT) setup | DIODES | Active | 3~7 Days | 5,712 | |
| BSS123NH6433XTMA1 | SOT-23-3 packaged MOSFET with 100V VDS and 190mA ID | INFINEON | Active | 3~7 Days | 5,420 | |
| CDSOT23-SM712 | Advanced TVS diode with rating and SOT- package for compact design | Bourns | 3~7 Days | 2,745 | ||
| BAV99-V-GS18 | Switching Diodes: BAV99-V-GS18 - Engineered for fast switching speeds, ideal for rapid electronic transitions | VISHAY | Active | 3~7 Days | 7,963 | |
| BSS138N L6327 | N-Channel Silicon Transistor: This transistor is an N-channel device made of silicon, suitable for small signal applications | INFINEON | OBSOLETE | 3~7 Days | 3,393 | |
| BAS 16 E6327 | A V SI-diode with minimal power consumpti | INFINEON | 3~7 Days | 4,871 | ||
| BC817-25-7-F | Diodes Inc BC817-25-7-F NPN Transistor | Diodes Incorporated | Active | 3~7 Days | 7,560 | |
| APX809-46SAG-7 | Reset IC with 200ms delay | DIODES | Active | 3~7 Days | 3,437 | |
| APX803-26SAG-7 | With open drain configuration, the APX803-26SAG-7 IC is a supervisor integrated circuit that operates at a voltage range of 1 | DIODES | Active | 3~7 Days | 5,333 | |
| 2N7002-T1-E3 | N-channel 60-volt MOSFET with a current rating of 0.115 amperes, packaged in a 3-pin SOT-23 format for surface-mount applications | VISHAY SILICONIX | Active | 3~7 Days | 6,528 | |
| 2N7002E-7-F | N-CHANNEL MOSFET with ENHANCEMENT MODE | DIODES | Active | 3~7 Days | 4,910 | |
| 2N7002-T1-GE3 | A compact, high-performance power device for use in a variety of electronic systems | VISHAY SILICONIX | 3~7 Days | 5,116 |
Additional Package/Case