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SOT23-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| 2N7002-T1 | 781-2N7002K-GE3 can be substituted with MOSFET 2N7002-T1 | VISHAY SILICONIX | 3~7 Days | 3,562 | ||
| 2N7002P,235 | MOSFET N-channel 60V 0.36A SOT-23 | Nexperia | 3~7 Days | 5,037 | ||
| 2STR2215 | Small signal PNP transistor with 1500mA, 15V capability in plastic package-3 | STMicroelectronics | 3~7 Days | 4,736 | ||
| TLE4964-2M | SMD HallSwitch Latch | INFINEON | 3~7 Days | 5,290 | ||
| DUP2105SOQ-7 | Bi-Directional Electrostatic and Surge Protection TVS/ESD ROHS 8A 350W 44V 26.2V 24V@Max SOT-23-3 | DIODES | 3~7 Days | 4,910 | ||
| SI2323DS-T1-E3 | SI2323DS-T1-E3 is a P-channel MOSFET housed in SOT-23 package | Vishay | ACTIVE | 3~7 Days | 8,292 | |
| SI2333DDS-T1-GE3 | ROHS-compliant P Channel SOT-23 MOSFET capable of handling currents up to 5A with a low 1V voltage drop at 250uA | Vishay | Active | 3~7 Days | 6,595 | |
| SI2356DS-T1-GE3 | 40 volts rated voltage | Vishay | ACTIVE | 3~7 Days | 7,691 | |
| MMUN2115LT1G | Pre-Biased Bipolar Transistors: MMUN2115LT1G, featuring a BRT PNP design capable of handling 100mA at 50V | Onsemi | 3~7 Days | 4,778 | ||
| MAX809STR | The MAX809STR serves as a watchdog for the microprocessor, keeping it in check to prevent any malfunctions." | Onsemi | Discontinued | 3~7 Days | 6,154 | |
| 2N7002KT7G | The 2N7002KT7G is a N-channel MOSFET designed for switching purposes | Onsemi | 3~7 Days | 3,517 | ||
| MMBTA56LT1 | 0.5A 80V 300mW 3-Pin SOT-23 T/R Trans GP BJT PNP | Onsemi | 3~7 Days | 4,164 | ||
| SI7201-B-05-IV | Hall Effect Sensor, | SILICON LABS | Active | 3~7 Days | 4,287 | |
| MMBT6427LT1 | MMBT6427LT1: A high-gain NPN Darlington Transistor designed for use in circuits with currents up to 500mA and voltages up to 40V | Onsemi | 3~7 Days | 4,424 | ||
| FSB649 | 3-Pin NPN Silicon Transistor for General Purpose Applications, SOT-23 Package, 25V Voltage, 3A Current, 500mW Power | Onsemi | 3~7 Days | 6,624 | ||
| FDV303N | Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R | Onsemi | 3~7 Days | 3,124 | ||
| SI2399DS-T1-GE3 | Metal-oxide-semiconductor field-effect transistor with a maximum drain-source voltage of -20V and a maximum gate-source voltage of 12V | Vishay | Active | 3~7 Days | 7,211 | |
| SI2319CDS-T1-GE3 | P-Channel Silicon MOSFET with 4.4A Drain Current and 40V Voltage Rating | Vishay | ACTIVE | 3~7 Days | 5,231 | |
| DMP3056L-7 | Available in tape and reel packaging for convenient bulk purchases | Diodes Incorporated | ACTIVE | 3~7 Days | 8,795 | |
| DMP2215L-7 | SOT23 MOSFET from Diodes Inc DMP2215L-7 | Diodes Incorporated | 3~7 Days | 5,523 | ||
| MMBT3904 | Bipolar Transistors - BJT BJT, SOT-23, 40V, 200mA, NPN | Onsemi | 3~7 Days | 7,960 | ||
| ZXMN3A14FTA | Transistor MOSFET N-channel with 30V voltage rating and 3.2A current rating in a 3-pin SOT-23 package, supplied on tape and reel | Diodes Incorporated | Active | 3~7 Days | 5,979 | |
| DMG301NU-13 | A high-performance MOSFET designed for 25 volts drain-source voltage | Diodes Incorporated | Active | 3~7 Days | 4,860 | |
| MMBT2369 | NPN bipolar transistors for high-speed applications | Onsemi | 3~7 Days | 7,595 | ||
| DSS20200L-7 | -2 A, -20 V rating | Diodes Incorporated | Active | 3~7 Days | 5,301 | |
| BC846T | NPN Bipolar Epitaxial Transistors, 0.1A, 65V | Infineon | 3~7 Days | 5,191 | ||
| BAT54TA | Schottky Diodes & Rectifiers Single 40V 200mA | Diodes Incorporated | ACTIVE | 3~7 Days | 7,200 | |
| BZX84C12-7-F | Zener Diode with 12V rating and 5.3% tolerance | Diodes Incorporated | ACTIVE | 3~7 Days | 6,597 | |
| BC817-25-TP | BC817-25-TP transistors with a maximum voltage rating of 45V and a current rating of 800mA | Micro Commercial Components (Mcc) | 3~7 Days | 7,391 | ||
| BAS21 | Diodes - General Purpose, Power, Switching SOT23,200mA,200V,50n s | Infineon | 3~7 Days | 5,370 | ||
| TSM2N7002KCX | effect transistor, N-channel MOSFET, 0.2Amp, 60V | Taiwan Semiconductor | 3~7 Days | 6,232 | ||
| TSM2307CX | The TSM2307CX is a MOSFET designed as a P-channel variant with a voltage rating of 30V | Taiwan Semiconductor | Obsolete | 3~7 Days | 4,277 | |
| PMV48XP | 20V 3.5A P-channel MOSFET | Nexperia | 3~7 Days | 6,291 | ||
| LM45CIM3X | LM45CIM3X SOT-23 Temperature Sensors ROHS product details | Texas Instruments | 3~7 Days | 3,834 | ||
| MMBD4148SE | Diodes - General Purpose, Power, Switching High Conductance Ultra Fast | Onsemi | 3~7 Days | 5,489 | ||
| BCR185 | Bipolar transistors with pre-bias | INFINEON | 3~7 Days | 6,050 | ||
| NCP51460 | precise low-dropout regulator with 20mA capacity | Onsemi | 3~7 Days | 6,736 | ||
| NVR5124PL | -60V rated P-Channel Power MOSFET capable of conducting -1.1A with an on-resistance of 230mΩ | Onsemi | 3~7 Days | 6,681 | ||
| IRLML6344TR | IRLML6344TR is a power MOSFET transistor for high frequency applications. | INFINEON | 3~7 Days | 7,197 | ||
| TPS613222A | TPS613222A is a synchronous boost converter with integrated power MOSFETs for small displays and sensors. | Texas Instruments | 3~7 Days | 7,712 |
Additional Package/Case