2N7002P,235
MOSFET N-channel 60V 0.36A SOT-232N7002P,235
MOSFET N-channel 60V 0.36A SOT-23
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2N7002P,235 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
10 | $0.044 | $0.44 |
100 | $0.035 | $3.50 |
300 | $0.031 | $9.30 |
1000 | $0.028 | $28.00 |
5000 | $0.026 | $130.00 |
10000 | $0.025 | $250.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits■ Logic-level compatible■ Very fast switching■ Trench MOSFET technology■ AEC-Q101 qualifiedApplications■ Relay driver■ High-speed line driver■ Low-side loadswitch■ Switching circuits
Key Features
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- AEC-Q101 qualified
![Nexperia Inventory Nexperia Inventory](/files/uploads/inventory/NEXPERIA/NEXPERIA1.jpg)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 360 mA | Rds On - Drain-Source Resistance | 1.6 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Qg - Gate Charge | 600 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 420 mW |
Channel Mode | Enhancement | Brand | Nexperia |
Product Type ! | MOSFET | Factory Pack Quantity | 10000 |
Subcategory | MOSFETs | Part # Aliases | 934064132235 |
Unit Weight | 0.000282 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is 2N7002P,235?
The 2N7002P,235 is an N-channel enhancement mode field-effect transistor (FET) designed for low power, small signal switching applications. It is commonly used in a wide range of electronic circuits, including power management, voltage regulation, and signal amplification.
How Does 2N7002P,235 Work?
The 2N7002P,235 operates by controlling the flow of current between the source and drain terminals using an electric field. When a voltage is applied to the gate terminal, it modulates the conductivity of the FET, allowing for precise switching of current. This enables the transistor to function as a reliable and efficient electronic switch.
How Many Pins does 2N7002P,235 have and What are the Functions of the Pinout Configuration?
The 2N7002P,235 is housed in a SOT-23 package with three pins. The pinout configuration includes:
- G (Gate): Terminal for controlling the conductivity of the FET.
- D (Drain): Terminal for the output or load connection.
- S (Source): Terminal for the input or signal connection.
What are the Pros and Cons of 2N7002P,235?
Pros:
- Low Threshold Voltage: Enables operation in low voltage circuits.
- Small Package: The SOT-23 package is space-efficient and suitable for compact designs.
- Fast Switching Speed: Provides quick response in switching applications.
- Low On-Resistance: Minimizes power loss and heat generation during operation.
- Cost-Effective: Offers a cost-effective solution for small signal switching.
Cons:
- Low Voltage and Current Handling: May not be suitable for high power applications.
- Static Sensitivity: Requires proper handling to prevent damage from static electricity.
Are There Any Equivalents/Alternatives to 2N7002P,235 for Recommendation?
- The BS170 is a comparable N-channel FET commonly used in similar low-power switching applications.
- Alternatives to the 2N7002P,235 include the NDP6020P from ON Semiconductor and the IRF5305 from Infineon Technologies.
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