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SI2319DS-T1-E3
0.082 ohm on-resistance and 0.75W power dissipation capabilitySI2319DS-T1-E3
0.082 ohm on-resistance and 0.75W power dissipation capability
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Service & Packaging
Service & Packaging
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SI2319DS-T1-E3 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The Vishay SI2319DS-T1-E3 P Channel Mosfet is a high-performance semiconductor device designed for use in various electronic applications. With a drain source voltage (Vds) of 40V and a continuous drain current (Id) of 3A, this MOSFET is capable of handling moderate power levels with ease. The transistor mounting style is surface mount, making it convenient for PCB assembly. The Rds(On) test voltage is 4.5V, indicating low on-resistance for efficient power handling. The gate source threshold voltage max is 3V, ensuring reliable switching characteristics. Please note that this product is not RoHS compliant, so additional care should be taken for environmental considerations
Key Features
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 3 A | Rds On - Drain-Source Resistance | 82 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 17 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 1.25 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 25 ns |
| Forward Transconductance - Min | 7 S | Height | 1.45 mm |
| Length | 2.9 mm | Product Type ! | MOSFET |
| Rise Time ! | 15 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 7 ns |
| Width | 1.6 mm | Part # Aliases | SI2319DS-T1-BE3 SI2319DS-E3 |
| Unit Weight | 0.000282 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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