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TO252 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| SUD50P06-15L | 50A 60V 0.015 ohm P-Channel Si Power MOSFET TO-252 SUD50P06-15L | VISHAY | 3~7 Days | 7,335 | ||
| FDD9507L-F085 | P-Channel POWERTRENCH MOSFET with an on-resistance of 4.4 mΩ, rated for -100 A at -40 V | Onsemi | 3~7 Days | 4,123 | ||
| IRLR024NPBF | Manufacturer: Infineon | INFINEON | 3~7 Days | 5,823 | ||
| IRFR9024NPBF | TO-252AA P-Channel MOSFET Transistor: IRFR9024NPBF | INFINEON | 3~7 Days | 4,280 | ||
| BA033FP | The voltage regulator is suitable for various electronic applications requiring a regulated +3.3V power supply | Rohm Semiconductor | 3~7 Days | 4,260 | ||
| 2SC6076 | Transistors Bipolar - BJT ROHS DPAK | Toshiba Semiconductor And Storage | 3~7 Days | 4,699 | ||
| IRLR110 | DPAK N-Channel MOSFET | IR | 3~7 Days | 7,559 | ||
| IRLR120 | 100V N-channel transistor MOSFET with 7.7A current in DPAK package | IR | 3~7 Days | 5,600 | ||
| IRLR024 | Trans MOSFET N-CH 60V 14A 3-Pin (2+Tab) DPAK T/R | IR | 3~7 Days | 5,049 | ||
| IRLR014 | Power MOSFET | VISHAY | 3~7 Days | 4,820 | ||
| IRFR9120 | IRFR9120 product details, featuring a suggested alternative MOSFET 844-IRFR9120PBF | IR | 3~7 Days | 6,754 | ||
| IRFR9220 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | IR | 3~7 Days | 4,209 | ||
| IRFR9014 | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | IR | 3~7 Days | 4,910 | ||
| IRFR9024PBF | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | VISHAY | 3~7 Days | 7,986 | ||
| IRFR420 | 2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | IR | 3~7 Days | 7,204 | ||
| IRFR310 | Trans MOSFET N-CH 400V 1.7A 3-Pin(2+Tab) DPAK | IR | 3~7 Days | 7,689 | ||
| IRFR320 | IRFR320 N-Channel MOSFET in TO-252AA Package | IOR | 3~7 Days | 4,212 | ||
| IRFR014 | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | VISHAY | 3~7 Days | 4,144 | ||
| IRFR9020 | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | IR | 3~7 Days | 7,453 | ||
| SUD90330E-GE3 | POWER, FET, | VISHAY | 3~7 Days | 6,497 | ||
| IRFR120NTRPBF | This product is a powerful N-channel MOSFET with a voltage capacity of 100V and a HEXFET structure | infineon | ACTIVE | 3~7 Days | 9,171 | |
| DMP4051LK3 | The primary objective behind the design of this MOSFET is to diminish on-state resistance | Diodes Incorporated | 3~7 Days | 4,337 | ||
| BA17805FP | 5 V Fixed Positive Regulator | Rohm Semiconductor | 3~7 Days | 7,758 | ||
| 8EWS08S | Rectifiers - 800V, 200A" | VISHAY | Active | 3~7 Days | 6,857 | |
| 2SD1220 | Bipolar transistor designed for general-purpose small signal applications | Toshiba Semiconductor And Storage | 3~7 Days | 4,368 | ||
| TA7808F | Plastic Encapsulated Voltage Regulator with Fixed Output | Toshiba Semiconductor And Storage | 3~7 Days | 4,788 | ||
| 2SK3050 | Metal-oxide Semiconductor Field-Effect Transistor, N-Channel | Rohm Semiconductor | 3~7 Days | 7,771 | ||
| 2SC5825 | The 2SC5825 transistor has a gain of 120 at 100mA | Rohm Semiconductor | 3~7 Days | 6,444 | ||
| MCR703AT4G | This device, designated MCR703AT4G, is an SCR with a voltage handling capacity of 100 volts and a maximum current rating of 4 amperes RMS | LITTELFUSE | 3~7 Days | 3,136 | ||
| ZXMP7A17KTC | High-power switching device for efficient power conversi | DIODES INCORPORATED | 3~7 Days | 4,463 | ||
| VS-12CWQ10FN-M3 | DPAK (TO-252AA) Package with ROHS Compliance | VISHAY | 3~7 Days | 4,644 | ||
| SUD50P08-25L-BE3 | High-Voltage P-Channel MOSFET with 17A Drain-Source Current Handling | VISHAY | 3~7 Days | 5,174 | ||
| SUD40N10-25-E3 | MOSFET N-CH 100V 40A TO252 | VISHAY | Active | 3~7 Days | 6,597 | |
| SUD50P10-43L-GE3 | Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | VISHAY | Active | 3~7 Days | 6,205 | |
| IRFR4510 | IRFR4510 is a power MOSFET transistor used for high-speed switching applications. | INFINEON | 3~7 Days | 5,356 | ||
| IRFR7446 | IRFR7446 is a power MOSFET transistor used in various electronic applications. | INFINEON | 3~7 Days | 5,268 | ||
| IPD100N04S4L-02 | Power Field-Effect Transistor | INFINEON | 3~7 Days | 3,821 | ||
| LR2908 | LR2908 is a low-power, high-precision voltage reference chip. | IR | 3~7 Days | 3,991 | ||
| MC7809 | MC7809 description | Onsemi | 3~7 Days | 6,861 | ||
| TA78M08F | This product is a fixed positive single output standard regulator with a voltage regulation of 8 V | Toshiba Semiconductor And Storage | 3~7 Days | 5,304 |
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