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IRLR120
100V N-channel transistor MOSFET with 7.7A current in DPAK package
IRLR120
100V N-channel transistor MOSFET with 7.7A current in DPAK package
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Service & Packaging
Service & Packaging
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IRLR120 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRLR120 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications. It falls under the category of N-Channel MOSFETs with a maximum voltage rating of 100V and a continuous drain current rating of 7.7A when operating at a case temperature (Tc) of 25°C. It is capable of dissipating up to 2.5W of power when the ambient temperature (Ta) is at 25°C, and can handle up to 42W of power dissipation when the case temperature (Tc) is maximized. The IRLR120 is a surface mount component, specifically packaged in a DPAK (TO-252) package format, making it suitable for automated assembly processes and compact circuit designs. It features low on-state resistance and high switching speeds, making it ideal for applications requiring efficient power handling and control.
Key Features
- Fast switching times
- High voltage blocking
- Low gate current
- Safe operating area
Application
- Industrial automation
- Robotics
- Home automation
- Security systems
- Medical devices
- Consumer electronics
- Automotive systems
- Smart appliances
- IoT devices
- Process control systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | No | Rohs Code | No |
| Part Life Cycle Code | Transferred | Part Package Code | TO-252 |
| Pin Count ! | 3 | Reach Compliance Code | |
| ECCN Code | EAR99 | Additional Feature ! | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 210 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 7.7 A | Drain-source On Resistance-Max | 0.27 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 240 | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 31 A | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Form ! | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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