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TSOP-II Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| K4S561632J-UC75 | Compact 54-pin Thin Small Outline Package (TSOP-II) design, suitable for use in a variety of electronic devices | Samsung Electro-Mechanics | 3~7 Days | 3,251 | ||
| K6R4008V1D-UI10 | 44-Pin TSOP-II Packaging for Easy Installation and Integration | Samsung Electro-Mechanics | 3~7 Days | 4,392 | ||
| MT48LC16M16A2P-75 IT:D TR | This product is a SDRAM memory IC with a capacity of 256Mbit, operating at a speed of 133 MHz | Micron Technology | 3~7 Days | 7,467 | ||
| K4S561632N-LC75 | 16Mx16 3.3V 54-Pin TSOP-II SDRAM DRAM Chip 256Mbit | Samsung Electronics | ACTIVE | 3~7 Days | 9,434 | |
| K4S561632E-TC75 | Enhanced data processing capabilities with this advanced memory chip | Samsung Electronics | OBSOLETE | 3~7 Days | 8,564 | |
| MT48LC16M16A2P-75:DTR | Fast and powerful memory for high-speed applicatio | Micron Technology | 3~7 Days | 7,896 | ||
| MT48LC32M8A2P-7E:G | Operates at 3.3V power supply | Micron Technology | 3~7 Days | 2,331 | ||
| MT48LC32M16A2P-75ITC | Fast-paced DDR SDRAM chip for high-performance applications." (44 characters) | Micron Technology | 3~7 Days | 4,830 | ||
| IS42VM16160D-8TLI | 54-pin TSOP-II package configuration | Integrated Silicon Solution Inc | 3~7 Days | 3,814 | ||
| MT48LC16M8A2P-75:G | Parallel SDRAM module with impressive specifications: 128Mbit capacity, 133 MHz frequency, and 5 | Micron Technology | 3~7 Days | 5,605 | ||
| K6R4016V1D-UI10T00 | Ultra-low-power SRAM solution for high-reliability applications, featuring a 256K x 16 bit architecture and a 3.3V operating voltage | Samsung Electronics | 3~7 Days | 4,746 | ||
| K6X4016T3F-TF70T00 | With its low power consumption and low voltage operation, this RAM is an energy-efficient solutio | Samsung Electronics | 3~7 Days | 7,267 | ||
| MT48LC64M8A2P-75 IT:C TR | Reliable and efficient -powered DRAM solution for a wide range of computing application | Micron Technology | 3~7 Days | 5,942 | ||
| MT48LC4M32B2P-7 | Dynamic random-access memory | Micron Technology | OBSOLETE | 3~7 Days | 9,543 | |
| MT48LC2M32B2TG-6 | TSSOP-packaged SDRAM module with 86 pins and 2M x 32 memory layout | Micron Technology | OBSOLETE | 3~7 Days | 9,545 | |
| CY7C1020CV33-15ZC | A high-performance, low-power SRAM solution for demanding application | Infineon Technologies Ag | 3~7 Days | 2,605 | ||
| NT5DS32M16DS-5T | 2.6V Low Voltage Technology | Nanya Technology | OBSOLETE | 3~7 Days | 6,941 | |
| MT48LC4M16A2TG-75:G | High-speed, low-power memory solution for applications requiring large storage capacit | Micron Technology | 3~7 Days | 4,193 | ||
| MT48LC16M16A2TG-75IT | CMOS Synchronous DRAM with 16MX16 configuration | Micron Technology | OBSOLETE | 3~7 Days | 9,943 | |
| MT48LC16M16A2TG-75 | MT48LC16M16A2TG-75 is a dynamic random access memory (DRAM) chip with a capacity of 256Mbit, organized as a 16Mx16 configuration, operating at 3 | Micron Technology | OBSOLETE | 3~7 Days | 7,175 | |
| K6X8016T3B-UF55000 | High-performance SRAM chip designed for low power consumption and fast access time | Samsung Electronics | 3~7 Days | 7,742 | ||
| K6X4016C3F-TF55 | The K6X4016C3F-TF55 is a typical SRAM chip that offers a memory storage of 256KX16 and operates at a speed of 55ns | Samsung Electronics | ACTIVE | 3~7 Days | 6,880 | |
| K6X4008T1F-UF70T00 | With its advanced asynchronous architecture and fast access time of only 70ns | Samsung Electronics | 3~7 Days | 7,624 | ||
| K6R4016V1C-TC15000 | This chip supports -pin TSOP-II Tray packagin | Samsung Electronics | 3~7 Days | 2,858 | ||
| K4H561638N-LCB3000 | Advanced SDRAM technology for efficient information managemen | Samsung Electronics | 3~7 Days | 4,632 | ||
| K4H511638J-LCCC000 | Ideal for use in industrial control systems, medical equipment, and other high-reliability environments | Samsung Electronics | 3~7 Days | 4,204 | ||
| K4H510838J-LCCC000 | Fast and efficient memory solution with Mxarchitectu | Samsung Electronics | 3~7 Days | 4,802 | ||
| CY14B104N-ZS25XI | Compact and reliable, this 128Kbit SRAM module features a space-saving TSOP-44 package for versatile integration | Infineon | 3~7 Days | 6,607 | ||
| CY14B104L-ZS45XC | High-density storage solution for parallel interfaces, offering bit of NVRAM capabilities | Infineon | 3~7 Days | 7,150 | ||
| K6R4016V1D-TC10000 | Low-latency memory solution for fast access time | Samsung Electronics | 3~7 Days | 4,833 | ||
| K4H511638D-UCB3000 | A high-performance DRAM chip designed for demanding applications requiring fast data transfer and low power consumption | Samsung Electronics | 3~7 Days | 2,714 | ||
| K4S561632J-UC75000 | K4S561632J-UC75000 | Samsung Electronics | OBSOLETE | 3~7 Days | 6,499 | |
| EV2A16AMNYU35 | NVRAM 4M-Bit Memory | Teledyne e2v | ACTIVE | 3~7 Days | 8,220 | |
| CY7C1061GN18-15ZSXIT | 54-Pin TSOP T/R | Infineon Technologies | ACTIVE | 3~7 Days | 6,937 | |
| CY7C10612GE30-10ZSXIT | Product Description: CY7C10612GE30-10ZSXIT - Async SRAM Solution | Infineon Technologies | ACTIVE | 3~7 Days | 5,194 | |
| CY14B116L-ZS25XI | Ready for same-day dispatch | Infineon Technologies | ACTIVE | 3~7 Days | 5,121 | |
| CY14B108N-ZSP25XI | ROHS Pre-ordered Products CY14B108N-ZSP25XI TSOPII-54 | Infineon Technologies | ACTIVE | 3~7 Days | 5,945 | |
| CY14B104LA-ZS45XIT | NVRAM NVSRAM Parallel 4Mbit 3V 44-Pin TSOP-II T/R | Infineon Technologies | ACTIVE | 3~7 Days | 6,740 | |
| CY7S1061G30-10ZSXIT | 16-Mbit Fast Asynchronous Static RAM | Infineon Technologies | ACTIVE | 3~7 Days | 5,540 | |
| MT48LC4M32B2P-6 IT:G | 128 Megabit Parallel | Micron Technology | 3~7 Days | 2,377 |
Additional Package/Case