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| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| IS61WV5128BLL | 512K high-speed SRAM with low power consumption | ISSI | 3~7 Days | 4,723 | ||
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| BC817-16215 | 5V Voltage Rating | NXP | 3~7 Days | 6,127 | ||
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| MT29F64G08CBABAWP-B | High capacity storage solution | MICRON | 3~7 Days | 4,071 | ||
| MT46V16M16P-5B IT M | 2.6V operating voltage with 66-pin TSOP package | MICRON | 3~7 Days | 5,440 | ||
| S29GL128S90TFI010. | S29GL128S90TFI010 is a 128Mb Flash Memory chip by Cypress Semiconductors. | CYPRESS | 3~7 Days | 3,773 | ||
| MT48LC16M16A2P-7E IT | IC DRAM 256MBIT PAR 54TSOP II | MICRON | 3~7 Days | 6,000 | ||
| HY57V281620FTP-HI | HYNIX | 3~7 Days | 5,663 | |||
| W981208BH-75 | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | WINBOND | 3~7 Days | 4,396 | ||
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| W9864G6IH | IC DRAM 64MBIT PAR 54TSOP II | WINBOND | 3~7 Days | 3,935 | ||
| W9812G6IH | IC DRAM 128MBIT PAR 54TSOP II | WINBOND | 3~7 Days | 7,264 | ||
| NJW1194 | 2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR AND TONE CONTROL | JRC | 3~7 Days | 4,618 | ||
| MT48LC16M16A2P | Synchronous DRAM, | MICRON | 3~7 Days | 7,150 | ||
| MT28F640J3 | Q-FLASHTM MEMORY | MICRON | 3~7 Days | 4,524 | ||
| MT48LC8M32B2 | SYNCHRONOUS DRAM | MICRON | 3~7 Days | 5,443 | ||
| MT48LC8M16A2 | SYNCHRONOUS DRAM | MICRON | 3~7 Days | 5,116 | ||
| MB88101A | Contact for details | FUJITSU | 3~7 Days | 6,637 | ||
| AM29F160DB75EF | Flash, 1MX16, 70ns, PDSO48, | SPANSION | 3~7 Days | 6,939 | ||
| MT48LC8M8A2 | SYNCHRONOUS DRAM | MICRON | 3~7 Days | 3,505 | ||
| MT48LC8M16A2P-7E G | IC DRAM 128MBIT PAR 54TSOP II | MICRON | 3~7 Days | 5,345 | ||
| MT48LC16M8A2 | SYNCHRONOUS DRAM | MICRON | 3~7 Days | 6,297 | ||
| MT48LC16M4A2 | SYNCHRONOUS DRAM | MICRON | 3~7 Days | 3,754 | ||
| S29GL064N | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology | SPANSION | 3~7 Days | 4,164 | ||
| S29GL064M | 256, 128, 64, 32 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology | SPANSION | 3~7 Days | 3,730 | ||
| S29GL032N90 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology | SPANSION | 3~7 Days | 6,488 | ||
| S29GL032M | 256, 128, 64, 32 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology | SPANSION | 3~7 Days | 6,948 | ||
| MT46V32M8 | DOUBLE DATA RATE DDR SDRAM | MICRON | 3~7 Days | 7,897 | ||
| MT46V16M16 | Standard Package | MICRON | 3~7 Days | 4,089 |
Additional Package/Case