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TSOP Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| IS42S32200E | Reliable and fast DDR-SDRAM module for data-intensive applications, offering 64M bytes of storage space | ISSI | 3~7 Days | 7,018 | ||
| IS42S16400F | MB RAM component for enhanced processing power | ISSI | 3~7 Days | 7,678 | ||
| IS42S16400D | High-density memory chip with 64 megabytes capacity | ISSI | 3~7 Days | 5,008 | ||
| IS42S16320B | High-density dynamic random access memory | ISSI | 3~7 Days | 3,051 | ||
| AM29DL800BB-90EI | 3V/3.3V Operation | AMD | 3~7 Days | 3,188 | ||
| 5962F9563002VYC | 6 Channels, Single Output, Ceramic Flat Pack, 28 Pin | INTERSIL | 3~7 Days | 5,522 | ||
| S29GL256P10TFI020 | 3V 100ns NOR Flash 256Mb | Cypress Semiconductor Corp | ACTIVE | 3~7 Days | 6,239 | |
| S29GL01GS10TFI020 | NOR Flash 1G 3V 100ns Parallel NOR Flash | Infineon Technologies | ACTIVE | 3~7 Days | 7,831 | |
| S29GL512S10TFI010 | NOR Flash 512Mb 3V 100ns Parallel NOR Flash | Infineon Technologies | ACTIVE | 3~7 Days | 6,898 | |
| S29GL128P10TFI010 | NOR Flash 128Mb 3V 110ns Parallel NOR Flash | Cypress Semiconductor Corp | ACTIVE | 3~7 Days | 8,161 | |
| AT28LV010-20TU | IC EEPROM 1MBIT 200NS 32TSOP | Microchip Technology | 3~7 Days | 6,361 | ||
| NAND01GW3B | NAND01GW3B is a NAND flash memory chip commonly used in storage devices. | STMicroelectronics | 3~7 Days | 7,683 | ||
| TH58NVG6D2ETA20 | TH58NVG6D2ETA20 is a high-performance NAND flash memory chip. | TOSHIBA | 3~7 Days | 4,315 | ||
| H57V1262GTR | DDR SDRAM chip, 128Mb, 166MHz, 2.5V, 8K refresh. | HYNIX | 3~7 Days | 7,441 | ||
| MC10E016 | MC10E016 onsemi BBG | Onsemi | 3~7 Days | 5,407 | ||
| S29JL064J70TF100 | S29JL064J70TF100 chip is a 64Mb parallel NOR flash memory with high performance and reliability. | SPANSION | 3~7 Days | 7,420 | ||
| LT3692 | LT3692 is a high efficiency synchronous step-down switching regulator with up to 3.5A output current. | Analog Devices | 3~7 Days | 3,308 | ||
| SI3454 | SI3454 is a high-performance USB 3.0 to SATA bridge chip for external storage devices. | VISHAY | 3~7 Days | 3,500 | ||
| TH58NVG6D2FTA20 | TH58NVG6D2FTA20 is a NAND Flash memory chip by Toshiba, offering high performance and reliability. | TOSHIBA | 3~7 Days | 4,344 | ||
| TAS3001 | TAS3001 is a digital audio processor with FIR filter for speaker tuning and audio enhancement. | Texas Instruments | 3~7 Days | 4,534 | ||
| W9825G6EH | W9825G6EH is a high-speed, low-power SDRAM chip for applications requiring high memory bandwidth. | WINBOND | 3~7 Days | 3,045 | ||
| 29LV160DBTI-70G | 29LV160DBTI-70G is a 16Mb flash memory chip with 70ns access time and top boot sector feature. | MXIC | 3~7 Days | 3,047 | ||
| 29F32G08CAMCI | Is a 4Gb x 8 bit NAND Flash memory chip, offering high-speed data transfer and reliable storage. | INTEL | 3~7 Days | 5,509 | ||
| HYB39S64800AT-8 | Compact and efficient memory solution for various electronic devices | INFINEON | 3~7 Days | 4,343 | ||
| HYB25D256800BT-5 | The HYB25D256800BT-5 is a plastic TSSOP module, perfect for high-speed data processing applications | INFINEON | 3~7 Days | 3,667 | ||
| TLV5610 | 2.7V to 5.5V operating range | Texas Instruments | 3~7 Days | 5,920 | ||
| HYB39S256800DT-7 | 32MX8 Synchronous DRAM | INFINEON | 3~7 Days | 5,120 | ||
| TPA6112A2 | 150 milliwatt stereo headphone amplifier with differential analog input | Texas Instruments | 3~7 Days | 3,967 | ||
| TH58TEG8DDJTA20 | TH58TEG8DDJTA20 is a NAND flash memory chip used for data storage in various electronic devices. | TOSHIBA | 3~7 Days | 7,051 | ||
| NTGS4111P | Single P-Channel Power MOSFET with a TSOP-6 package | Onsemi | 3~7 Days | 3,262 | ||
| HYB25D256800BT | HYB25D256800BT is a 256Mb Double Data Rate Synchronous DRAM Chip. | INFINEON | 3~7 Days | 4,453 | ||
| HYB39S64800BT-8 | TSOP2-54 Plastic Package | INFINEON | 3~7 Days | 5,157 | ||
| MT8HTF12864AY-667E1 | DDR DRAM Module | MICRON | 3~7 Days | 3,715 | ||
| K9WAG08U1D | K9WAG08U1D is a NAND Flash Memory chip produced by Samsung, commonly used in electronic devices for storage. | SAMSUNG | 3~7 Days | 7,999 | ||
| K9LBG08U0E | K9LBG08U0E is a high-performance, reliable SD card flash storage solution. | SAMSUNG | 3~7 Days | 5,466 | ||
| R1LV3216RSA | R1LV3216RSA is a high-speed 512Kx32 synchronous static RAM chip with a burst mode feature. | MITSUBISHI | 3~7 Days | 6,311 | ||
| NTGS5120P | Power MOSFET in TSOP6 package with 60V voltage rating and 2.5A current capacity | Onsemi | 3~7 Days | 5,116 | ||
| IS62LV1024LL | IS62LV1024LL is a low-power CMOS SRAM chip with 1MB memory capacity. | ISSI | 3~7 Days | 7,276 | ||
| TPA2005D1 | Amplifier specifically designed for low-power applications with high efficiency | Texas Instruments | 3~7 Days | 4,151 | ||
| NAND256W3A | FLASH memory chip with 256Gb capacity; used in storage devices such as USB drives and SD cards. | STMicroelectronics | 3~7 Days | 7,442 |
Additional Package/Case