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TSOP48 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| AM29LV800BT-70EI | Flash memory with 512Kx16 capacity and 70ns access speed in PDSO48 package | Amd | 3~7 Days | 7,573 | ||
| TC58FVM6T5BTG65 | This product, TC58FVM6T5BTG65, is an IC with a 4M X 16 FLASH 3V PROM, suitable for high-speed data storage and retrieval | TOSHIBA | 3~7 Days | 7,968 | ||
| MX29F400CTTI-70G | Small form factor | MXIC | 3~7 Days | 4,062 | ||
| NAND256W3A0AN6 | PLASTIC TSOP-48 | STMicroelectronics | 3~7 Days | 3,104 | ||
| S29AL016D90TFI010 | Flash memory chip with 1MX16 capacity, 90ns speed, and lead-free PDSO48 package | SPANSION | 3~7 Days | 5,085 | ||
| S29JL064H70TFI00 | The S29JL064H70TFI00 is a flash memory chip manufactured by Cypress Semiconductor | SPANSION | 3~7 Days | 7,948 | ||
| TC58TEG6DCJTA00 | The TC58TEG6DCJTA00 is a NAND flash memory chip manufactured by Toshiba | TOSHIBA | 3~7 Days | 5,381 | ||
| S34ML02G100TFI00 | The S34ML02G100TFI00 is a 2GB NAND flash memory chip produced by Cypress Semiconductor | SPANSION | 3~7 Days | 6,404 | ||
| S34ML01G100TFI00 | The S34ML01G100TFI00 is a NAND flash memory chip with a capacity of 1GB | SPANSION | 3~7 Days | 6,553 | ||
| S34ML01G100TF100 | S34ML01G100TF100 is a NAND flash memory chip with 1 Gbit capacity | SPANSION | 3~7 Days | 7,409 | ||
| MX29LV160CBTC-70G | MX29LV160CBTC-70G is a flash memory chip manufactured by Macronix | MXIC | 3~7 Days | 4,583 | ||
| S29AL004D90TFI020 | Flash, 256KX16, 90ns, PDSO48, MO-142DD, LEAD FREE, TSOP-48 | SPANSION | 3~7 Days | 5,165 | ||
| K9F4G08U0B-PCB0 | Samsung.tsop.tray.spq 1000.MOQ 1000 / Mpq 1000.FLASH | SAMSUNG | 3~7 Days | 7,045 | ||
| K9F1G08U0B-PCB0 | SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 25us 48-Pin TSOP-I | SAMSUNG | 3~7 Days | 6,252 | ||
| K9NCG08U5M-PCK0 | SAMSUNG | 3~7 Days | 4,106 | |||
| MT29F128G08AJAAAWP-ITZ | IC FLASH 128GBIT PAR 48TSOP I | MICRON | 3~7 Days | 6,807 | ||
| S29AL004D70TFI010 | Flash, 256KX16, 70ns, PDSO48, MO-142DD, LEAD FREE, TSOP-48 | SPANSION | 3~7 Days | 7,847 | ||
| K9F2G08U0A-PIB0 | Flash, 256MX8, 20ns, PDSO48, | SAMSUNG | 3~7 Days | 6,947 | ||
| NAND512W3A2CN6 | 64MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48 | STMicroelectronics | 3~7 Days | 6,902 | ||
| K9F1G08U0D-SIB0 | SAMSUNG | 3~7 Days | 6,704 | |||
| K9G8G08U0M-PCB0 | gigabit by 8, 20 nanosecond, PDSO48 package | Samsung Semiconductor | 3~7 Days | 4,305 | ||
| TH58NVG6H2HTAK0 | High-capacity storage solution for a wide range of application | Toshiba Semiconductor And Storage | Obsolete | 3~7 Days | 3,834 | |
| H27U1G8F2CTR-BC | Advanced HUTR-BC chip design for reliable data management and transfe | SKHYNIX | 3~7 Days | 4,954 | ||
| S29AL016J70TFI02 | High-speed storage chip | SPANSION | 3~7 Days | 4,205 | ||
| TC58NVG3S0FTAI0 | Parallel Memory Chip | TOSHIBA | Active | 3~7 Days | 3,615 | |
| MT29F1G08ABADAWP:D TR | 3.3V Parallel Interface | MICRON | 3~7 Days | 7,724 | ||
| MX29F800CTTI-70G | Parallel Flash Memory with 1M x 8 bit configuration | MXIC | 3~7 Days | 3,703 | ||
| NAND512W3A2CN6F | 4 megabit by 8, 35 nanosecond, PDSO48 | STMicroelectronics | 3~7 Days | 5,669 | ||
| TC58NVG5H2HTA00 | Cutting-edge 3.3V SLC NAND Flash technology | TOSHIBA | 3~7 Days | 5,935 | ||
| K9F1G08U0E-SCB0 | Superior reliability and speed make this device perfect for industrial use cases | Samsung | 3~7 Days | 7,624 | ||
| TC58TEG5DCJTA00 | PDSO48-packaged flash memory component with 4Gx8 configuration for fast data storage and retrieval | TOSHIBA | 3~7 Days | 6,569 | ||
| TC58FVM6B5BTG65 | 0.50 mm pitch PDSO48 IC suitable for various applications | TOSHIBA | 3~7 Days | 4,368 | ||
| MT29F2G08AABWP | 8 nanosecond access time | MICRON | 3~7 Days | 5,270 | ||
| M29F800FT55N3E2 | 8Bit/16Bit Parallel | MICRON | Active | 3~7 Days | 6,550 | |
| M29F800FB5AN6F2 | High-speed 55ns Memory | MICRON | Active | 3~7 Days | 3,560 | |
| M28W160CB70N6E | NOR Flash STD FLASH 16 MEG | stmicroelectronics | OBSOLETE | 3~7 Days | 3,000 | |
| TC58TFG7DDLTA0D | TC58TFG7DDLTA0D is a Toshiba NAND flash memory chip. | TOSHIBA | 3~7 Days | 7,261 | ||
| TC58TEG6DDKTA00 | TC58TEG6DDKTA00 chip is a NAND flash memory device with storage capacity of 64 GB. | TOSHIBA | 3~7 Days | 4,332 | ||
| S29JL064J70TFI00 | Flash memory chip for solid state drives with 64MB capacity, S29JL064J70TFI00. | SPANSION | 3~7 Days | 4,912 | ||
| MT29F16G08CBACAWP-C | Multi-Level Cell memory with 16GB storage capacity in a 2GX8 TSOP package | MICRON | 3~7 Days | 5,492 |
Additional Package/Case