NAND512W3A2CN6
64MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48NAND512W3A2CN6
64MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
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Manufacturer Part # : NAND512W3A2CN6
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Package/Case: TSOP48
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Brand: STMicroelectronics
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Product Categories : Memory
Quality Assurance
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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NAND512W3A2CN6 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
SUMMARY DESCRIPTIONThe NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that usesthe Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.FEATURES SUMMARY■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ)■ COPY BACK PROGRAM MODE – Fast page copy without external buffering■ FAST BLOCK ERASE – Block erase time: 2ms (Typ)■ STATUS REGISTER■ ELECTRONIC SIGNATURE■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller■ SERIAL NUMBER OPTION■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models
![](/files/uploads/product/b/49eb238b82ab4fd09e270d28f3071b20.webp)
Key Features
- HIGH DENSITY NAND FLASH MEMORIES
- – Up to 1 Gbit memory array
- – Up to 32 Mbit spare area
- – Cost effective solutions for mass storage applications
- NAND INTERFACE
- – x8 or x16 bus width
- – Multiplexed Address/ Data
- – Pinout compatibility for all densities
- SUPPLY VOLTAGE
- – 1.8V device: VDD = 1.7 to 1.95V
- – 3.0V device: VDD = 2.7 to 3.6V
- PAGE SIZE
- – x8 device: (512 + 16 spare) Bytes
- – x16 device: (256 + 8 spare) Words
- BLOCK SIZE
- – x8 device: (16K + 512 spare) Bytes
- – x16 device: (8K + 256 spare) Words
- PAGE READ / PROGRAM
- – Random access: 12µs (max)
- – Sequential access: 50ns (min)
- – Page program time: 200µs (typ)
- COPY BACK PROGRAM MODE
- – Fast page copy without external buffering
- FAST BLOCK ERASE
- – Block erase time: 2ms (Typ)
- STATUS REGISTER
- ELECTRONIC SIGNATURE
- CHIP ENABLE ‘DON’T CARE’ OPTION
- – Simple interface with microcontroller
- SERIAL NUMBER OPTION
- HARDWARE DATA PROTECTION
- – Program/Erase locked during Power transitions
- DATA INTEGRITY
- – 100,000 Program/Erase cycles
- – 10 years Data Retention
- RoHS COMPLIANCE
- – Lead-Free Components are Compliant with the RoHS Directive
- DEVELOPMENT TOOLS
- – Error Correction Code software and hardware models
- – Bad Blocks Management and Wear Leveling algorithms
- – File System OS Native reference software
- – Hardware simulation models
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Part Package Code | TSOP | Pin Count ! | 48 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.51 | Access Time-Max | 35 ns |
JESD-30 Code | R-PDSO-G48 | JESD-609 Code | e3 |
Length | 18.4 mm | Memory Density | 536870912 bit |
Memory IC Type | FLASH | Memory Width | 8 |
Number of Functions | 1 | Number of Terminals | 48 |
Number of Words | 67108864 words | Number of Words Code | 64000000 |
Operating Mode ! | ASYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -40 °C | Organization | 64MX8 |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP1 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Parallel/Serial | PARALLEL | Programming Voltage ! | 3 V |
Qualification Status ! | Not Qualified | Seated Height-Max | 1.2 mm |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | INDUSTRIAL |
Terminal Finish | TIN | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.5 mm | Terminal Position | DUAL |
Type | SLC NAND TYPE | Width | 12 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is NAND512W3A2CN6?
The NAND512W3A2CN6 is a 512Mbit (64M x 8) parallel NAND flash memory device manufactured by Micron Technology. It is designed for high-density data storage and retrieval in various electronic devices, such as consumer electronics, industrial applications, and automotive systems.
How Does NAND512W3A2CN6 Work?
The NAND512W3A2CN6 works by storing data in a series of memory cells organized in a grid of rows and columns. It utilizes a parallel interface for data input and output, allowing for efficient data transfer between the memory device and the host system. The device uses NAND flash technology, which allows for high-density storage and non-volatile data retention.
How Many Pins does NAND512W3A2CN6 have and What are the Functions of the Pinout Configuration?
The NAND512W3A2CN6 is housed in a 48-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:
- A[0:15]: Address input pins for selecting memory locations.
- IO[0:7]: Input/output data pins for parallel data transfer.
- WE: Write enable input pin.
- CE: Chip enable input pin.
- CLE: Command latch enable input pin for command input.
- ALE: Address latch enable input pin for address input.
- R/B: Ready/busy output pin to indicate memory status.
- Y/B: Control pin for selecting read (Y) or erase/program (B) operation.
What are the Pros and Cons of NAND512W3A2CN6?
Pros:
- High Density: Offers 512Mbit of storage capacity for large data requirements.
- Parallel Interface: Allows for efficient data transfer and compatibility with a wide range of systems.
- Non-Volatile Memory: Retains data even when power is removed, making it suitable for storage applications.
- Durable: NAND flash technology provides robust and reliable data storage.
- Industrial Grade: Suitable for use in demanding industrial and automotive environments.
Cons:
- Complex Interface: The parallel interface may require additional support circuitry for integration into some systems.
- Endurance: NAND flash memory has a limited number of program/erase cycles, which may affect the device's lifespan in certain applications.
Are There Any Equivalents/Alternatives to NAND512W3A2CN6 for Recommendation?
- The S34ML04G2 from Cypress Semiconductor is a similar parallel NAND flash memory device with comparable features.
- Alternatives to the NAND512W3A2CN6 include the MT29F512G08CJAAA from Micron Technology and the W29N01HV from Winbond Electronics.
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