2MBI200HH-120-50
200A and 1200V rating2MBI200HH-120-50
200A and 1200V rating
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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2MBI200HH-120-50 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2MBI200HH-120-50 is a high power switching module developed by Fuji Electric. This module features a dual-insulated gate bipolar transistor (IGBT) that allows for efficient and reliable power switching applications. The module has a rated voltage of 1200V and a continuous current rating of 200A, making it suitable for high-power applications.The 2MBI200HH-120-50 is designed for use in inverters, motor control systems, and other power electronics applications where high power and voltage capabilities are required. The module's compact design and high efficiency make it an ideal choice for a wide range of industrial and commercial applications.The module is designed with built-in protection features, including short-circuit protection and overcurrent protection, to ensure safe and reliable operation. It also has a low thermal resistance, allowing for efficient heat dissipation and improved overall performance.
Key Features
- 2MBI200HH-120-50 is a power module with a voltage rating of 1200V
- It has a current rating of 200A and a power rating of 50W
- Features high reliability and efficiency
- Suitable for high power applications
- Compact design for easy integration
Application
- Industrial high power inverters
- Motor control applications
- Welding machines
- Power supplies
- Renewable energy systems
- Electric vehicles
- Induction heating equipment
- Uninterruptible power supplies (UPS)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | ECCN Code | EAR99 | |
Case Connection | ISOLATED | Collector Current-Max (IC) | 300 A |
Collector-Emitter Voltage-Max | 1200 V | Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
Gate-Emitter Voltage-Max | 20 V | JESD-30 Code | R-XUFM-X7 |
Number of Elements | 2 | Number of Terminals | 7 |
Operating Temperature-Max | 150 °C | Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 1790 W | Surface Mount ! | NO |
Terminal Form ! | UNSPECIFIED | Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 300 ns |
VCEsat-Max | 3.65 V |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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