2MBI450VX-120-50
IGBT 2MBI450VX-120-502MBI450VX-120-50
IGBT 2MBI450VX-120-50
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Service & Packaging
Service & Packaging
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2MBI450VX-120-50 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2MBI450VX-120-50 is a power module developed by Fuji Electric. It is a dual IGBT (Insulated Gate Bipolar Transistor) module with a voltage rating of 1200V and a current rating of 450A. The module is designed for use in high-power applications where efficiency and reliability are critical.The 2MBI450VX-120-50 features a compact design that allows for easy installation and integration into various systems. It also includes built-in protection features such as short circuit and overvoltage protection to ensure safe operation. The module is suitable for a wide range of applications including motor drives, inverters, and power supplies.With a switching frequency of 50kHz, the 2MBI450VX-120-50 is capable of delivering high performance with minimal losses. It has a low on-state voltage drop which helps to improve efficiency and reduce heat generation. The module is also equipped with a high temperature operating range to ensure reliability in harsh environments.
Key Features
- Module Type: IGBT
- Voltage: 1200V
- Current: 450A
- Package: Module
- Mounting Type: Chassis Mount
- Switching Energy: 455mJ
Application
- Motor drives
- Uninterruptible power supplies (UPS)
- Welding equipment
- Induction heating systems
- Solar inverters
- Wind power converters
- Electric vehicles
- Power supplies
- Power factor correction
- Lighting systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Active | Reach Compliance Code | |
ECCN Code | EAR99 | Case Connection | ISOLATED |
Collector Current-Max (IC) | 600 A | Collector-Emitter Voltage-Max | 1200 V |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | Gate-Emitter Thr Voltage-Max | 7 V |
Gate-Emitter Voltage-Max | 20 V | JESD-30 Code | R-XUFM-X11 |
Number of Elements | 2 | Number of Terminals | 11 |
Operating Temperature-Max | 175 °C | Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Surface Mount ! | NO | Terminal Form ! | UNSPECIFIED |
Terminal Position | UPPER | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 1160 ns | Turn-on Time-Nom (ton) | 730 ns |
VCEsat-Max | 2.8 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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