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2N2270
Bipolar Transistor
2N2270
Bipolar Transistor
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Manufacturer Part # : 2N2270
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Package/Case: TO-39
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Part Status : Active
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Brand: CENTRAL
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Product Categories : Single Bipolar Transistors
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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2N2270 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $85.792 | $85.79 |
| 200 | $33.201 | $6,640.20 |
| 500 | $32.035 | $16,017.50 |
| 1000 | $31.457 | $31,457.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The 2N2270 is a Bipolar Junction Transistor (BJT) designed for general-purpose amplifier and switching applications. It is an NPN transistor with a maximum voltage rating of 45V, a maximum current rating of 1A, and a frequency capability of up to 100MHz. The 2N2270 comes in a TO-39 through-hole package, which allows for easy mounting on PCBs. With a power rating of 1W, the 2N2270 can handle moderate power levels making it suitable for various applications in audio amplification, signal processing, and voltage regulation circuits. The NPN configuration allows for current to flow from the emitter to the collector when a small current is applied to the base terminal, effectively amplifying the signal. The 2N2270 is known for its high gain and low noise characteristics, which make it a popular choice in applications requiring high fidelity and minimal distortion. Its robust design and reliability also make it suitable for industrial and commercial applications where performance and longevity are crucial.
Key Features
- NPN silicon planar epitaxial transistor
- Low power consumption
- High current gain
- Low noise figure
- Complementary type to 2N3019
- Designed for general purpose amplifier and switch applications
- Maximum power dissipation of 500mW
- Operating temperature range of -65°C to 200°C
Application
- RF amplifiers
- Oscillators
- Mixers
- Detector circuits
- Switching circuits
- Low noise amplifiers
- Signal processing
- Communication systems
- Television receivers
- Radar systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Microchip Technology | Product Category ! | Transistors (BJT) - Single |
| Series | 2N2270 | Packaging ! | Bulk |
| Part-Aliases | TO-39 | Mounting-Style | NPN |
| Package-Case | 900 mV | Configuration | 60 V |
| Collector-Emitter-Voltage-VCEO-Max | 7 V | Transistor-Polarity | 50 |
| Collector-Emitter-Saturation-Voltage | 200 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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