2N3906A
BJT transistors2N3906A
BJT transistors
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2N3906A DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2N3906 is a PNP bipolar junction transistor commonly used in low-power amplification and switching applications. The "A" suffix in 2N3906A indicates that it is a premium-performance version of the standard 2N3906 transistor. The 2N3906A has a maximum collector current (IC) rating of 200 mA and a maximum collector-emitter voltage (VCEO) of 40 V. It also has a maximum emitter-base voltage (VEBO) of 5 V. The transistor has a total power dissipation (Pd) of 625 mW and a DC current gain (hFE) ranging from 100 to 300.The transistor is housed in a TO-92 package which is a standard small signal package that allows for easy mounting on circuit boards. The 2N3906A is easily recognizable by its pin configuration: the emitter is connected to the N-type semiconductor material of the transistor and is usually the lead located in the center, while the collector is connected to the P-type semiconductor and is typically the lead connected to the curved side of the package.
Key Features
- Small signal PNP transistor
- Low power dissipation
- High current capacity (200mA)
- Low leakage current
- High voltage capability (40V)
- High voltage gain (hfe = 100-300)
- Suitable for switching and amplification applications
- TO-92 package for easy mounting
Application
- Audio amplifiers
- Switching circuits
- Differential amplifier circuits
- Signal amplifiers
- Power management applications
- Motor control circuits
- Electronic sensors and detectors
- Low power applications
- Voltage regulators
- LED drivers
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category ! | Bipolar Transistors - BJT |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 40 V |
Emitter- Base Voltage VEBO | 5 V | Pd - Power Dissipation | 600 mW |
Gain Bandwidth Product fT | 250 MHz | Brand | onsemi / Fairchild |
DC Collector/Base Gain hfe Min | 60 at 100 uA, 1 V | Product Type ! | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
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