FQPF2N70
Transistor,mosfet,n-Channel,700V V(Br)Dss,2A I(D),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi FQPF2N70FQPF2N70
Transistor,mosfet,n-Channel,700V V(Br)Dss,2A I(D),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi FQPF2N70
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Service & Packaging
Service & Packaging
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FQPF2N70 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Fairchild Semiconductor's FQPF2N70 field-effect transistor shines in power management applications as a member of the N-channel MOSFET family. When a positive voltage is applied to its gate, this transistor efficiently conducts electricity. Capable of handling voltages up to 70 volts, the FQPF2N70 is engineered for high-demand tasks. Its maximum drain current specification ensures reliable performance without overheating concerns, typically supporting currents in the range of a few amperes. The on-resistance parameter, symbolized as RDS(on), is pivotal for reducing power dissipation and enhancing operational efficiency, making this transistor a dependable choice for various applications. Encased in a TO-220 package, the FQPF2N70 offers superior thermal conductivity for enhanced reliability, suitable for power supplies, voltage regulation circuits, and motor control applications where effective power management is critical
Key Features
- High-speed switching
- Ultra-low gate charge ( Typ. 4nC)
- Compact package, 8-pin DIP
- High voltage operation, up to 500V
- Silicon carbide construction for high reliability
- Avalanche tested for 100% reliability
Application
- High-speed switching
- Power supply applications
- DC-DC converters
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Fairchild Semiconductor | Product Category ! | FETs - Single |
Packaging ! | Tube | Part-Aliases | Through Hole |
Unit-Weight | 1 Channel | Mounting-Style | 28 W |
Package-Case | + 150 C | Technology | - 55 C |
Number-of-Channels | 30 V | Configuration | 2 A |
Transistor-Type | 700 V | Pd-Power-Dissipation | 6.3 Ohms |
Maximum Operating Temperature ! | 30 ns | RoHS | Details |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 700 V | Id - Continuous Drain Current | 2 A |
Rds On - Drain-Source Resistance | 6.3 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 11 nC |
Minimum Operating Temperature | - 55 C | Pd - Power Dissipation | 28 W |
Channel Mode | Enhancement | Tradename | QFET |
Series | FQPF2N70 | Brand | onsemi / Fairchild |
Fall Time | 70 ns | Forward Transconductance - Min | 2.45 S |
Height | 16.07 mm | Length | 10.36 mm |
Product Type ! | MOSFET | Rise Time ! | 80 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 50 ns | Typical Turn-On Delay Time | 30 ns |
Width | 4.9 mm | Part # Aliases | FQPF2N70_NL |
Unit Weight | 0.068784 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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