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2N5306
Boxed Development Kit for 2N5306 Trans Darlington NPN
2N5306
Boxed Development Kit for 2N5306 Trans Darlington NPN
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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2N5306 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2N5306 is a Bipolar Junction Transistor (BJT) NPN Darlington type component rated for a maximum voltage of 25 volts and a maximum current of 1.2 amperes. It is capable of handling a maximum power dissipation of 625 milliwatts. This transistor is designed for through-hole mounting and comes in a TO-92-3 package. The Darlington configuration of this transistor provides high current gain, making it suitable for applications that require high current amplification. Its NPN construction means that it allows current to flow from the collector to the emitter when a small current is applied to the base. The TO-92-3 package of the 2N5306 consists of three leads: the emitter, base, and collector leads, which allow for easy soldering onto a printed circuit board. This component is commonly used in audio amplifiers, power supplies, and switching circuits due to its high current capability and versatility.
Key Features
- PNP silicon transistor
- Low power dissipation
- High voltage capability
- Fast switching speeds
- High current gain
- Used in audio amplifiers, switching circuits, and signal amplification
- TO-106 package type
- Available in through-hole mounting type
- Operating temperature range of -65°C to +200°C
Application
- Audio amplifiers
- High-speed switching applications
- Power amplifiers
- Motor control circuits
- Voltage regulators
- Signal processing applications
- Voltage-controlled oscillators
- Automation systems
- Radio frequency circuits
- Power management systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | onsemi | Product Category ! | Darlington Transistors |
| RoHS | Details | Configuration | Single |
| Transistor Polarity | NPN | Collector- Emitter Voltage VCEO Max | 25 V |
| Emitter- Base Voltage VEBO | 12 V | Collector- Base Voltage VCBO | 25 V |
| Maximum DC Collector Current | 1.2 A | Maximum Collector Cut-off Current | 100 nA |
| Mounting Style | Through Hole | Package / Case | TO-92 |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Brand | onsemi / Fairchild | DC Collector/Base Gain hfe Min | 20000 |
| Height | 5.33 mm | Length | 5.2 mm |
| Product Type ! | Darlington Transistors | Factory Pack Quantity | 2000 |
| Subcategory | Transistors | Width | 4.19 mm |
| Unit Weight | 0.007090 oz |
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