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2N7000BU
TO-92-3 package
2N7000BU
TO-92-3 package
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2N7000BU DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
Key Features
- Fast switching times
- Improved inductive ruggedness
- Lower input capacitance
- Extended safe operating area
- Improved high-temperature reliability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-92-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 1.2 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 400 mW | Channel Mode | Enhancement |
| Series | 2N7000 | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 10 ns |
| Forward Transconductance - Min | 0.1 S | Height | 5.33 mm |
| Length | 5.2 mm | Product | MOSFET Small Signals |
| Product Type ! | MOSFET | Rise Time ! | 10 ns |
| Factory Pack Quantity | 10000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 10 ns | Typical Turn-On Delay Time | 10 ns |
| Width | 4.19 mm | Part # Aliases | 2N7000BU_NL |
| Unit Weight | 0.016000 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is 2N7000BU?
The 2N7000BU is an N-channel enhancement mode field-effect transistor (FET) designed for low power, small signal switching applications. It is commonly used in various electronic circuits for level shifting, interfacing with microcontrollers, and low voltage switching applications.
How Does 2N7000BU Work?
The 2N7000BU operates by controlling the flow of current between the drain and source terminals using the voltage applied to the gate terminal. In enhancement mode, the transistor turns on when a positive voltage is applied to the gate, allowing current to flow between the drain and source. It acts as a solid-state switch for low voltage and low current applications.
How Many Pins does 2N7000BU have and What are the Functions of the Pinout Configuration?
The 2N7000BU is housed in a TO-92 package with three leads. The pinout configuration includes:
- Gate (G): Controls the FET's conductivity when a voltage is applied.
- Drain (D): Connects to the higher voltage in a switching application.
- Source (S): Connects to the lower voltage in a switching application.
What are the Pros and Cons of 2N7000BU?
Pros:
- Low Threshold Voltage: Suitable for low voltage switching applications.
- Compact Package: The TO-92 package is space-efficient and easy to work with.
- Low Cost: Provides a cost-effective solution for small signal switching.
- Low Power Consumption: Consumes minimal power when in the on-state.
Cons:
- Low Current Handling: Not suitable for high current applications.
- Voltage Limit: Limited maximum voltage handling capability compared to higher power transistors.
- Sensitivity: Susceptible to damage from static electricity and voltage spikes if not handled properly.
Are There Any Equivalents/Alternatives to 2N7000BU for Recommendation?
Alternatives to the 2N7000BU include the BS170 and BS270, both N-channel FETs suitable for similar low power switching applications.
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