2N7002Q-7-F
These MOSFETs have a low on-resistance of 5Ω at 500mA and operate with a gate threshold voltage of 2.5V at 250μA2N7002Q-7-F
These MOSFETs have a low on-resistance of 5Ω at 500mA and operate with a gate threshold voltage of 2.5V at 250μA
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Manufacturer Part # : 2N7002Q-7-F
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Package/Case: SOT23-3
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Part Status : Active
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Brand: Diodes Incorporated
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
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Service & Packaging
Service & Packaging
About After Sales Service
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2N7002Q-7-F DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
10 | $0.033 | $0.33 |
100 | $0.028 | $2.80 |
300 | $0.026 | $7.80 |
3000 | $0.024 | $72.00 |
6000 | $0.023 | $138.00 |
9000 | $0.022 | $198.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The 2N7002Q-7-F is a high-quality N-channel enhancement mode field-effect transistor, ideal for small signal applications. With a maximum drain current of 0.17A and a voltage rating of 60V, this transistor offers reliable performance in a compact package. It is a single-element, N-Channel MOSFET, based on silicon technology, making it a popular choice for a variety of electronic circuits
Key Features
HIGH RELIABILITYApplication
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Diodes Incorporated | Product Category ! | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 210 mA |
Rds On - Drain-Source Resistance | 7.5 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 223 pC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 540 mW | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Series | 2N7002 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 5.6 ns | Forward Transconductance - Min | 80 mS |
Product Type ! | MOSFET | Rise Time ! | 3 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 7.6 ns | Typical Turn-On Delay Time | 2.8 ns |
Unit Weight | 0.000282 oz |
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