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2SA954
0.3A I(C), 80V V(BR)CEO, 1-Element2SA954
0.3A I(C), 80V V(BR)CEO, 1-Element
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Service & Packaging
Service & Packaging
About After Sales Service
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2SA954 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SA954 is a PNP silicon transistor designed for general-purpose switching applications. It features a maximum of 150V VCEO and 150mA IC for continuous collector current, making it suitable for low-level switching and amplification tasks. The 2SA954 is housed in a TO-92 package, which is a common choice for small-signal transistors due to its compact size and ease of use.This transistor has a typical hFE (DC current gain) of 60 at IC = 1mA, which indicates its moderate amplification capabilities. The 2SA954 has a maximum collector power dissipation of 400mW, allowing it to handle relatively low power levels without overheating.When operating the 2SA954, it is advisable to stay within its absolute maximum ratings to ensure proper functioning and avoid damaging the device. These include a maximum collector-base voltage (VCBO) of 160V, a maximum emitter-base voltage (VEBO) of 5V, and a maximum collector current (IC) of 150mA.
Key Features
- Low frequency power amplifier
- High voltage, high current
- Complementary to 2SC2194
- Fast switching speed
- Low saturation voltage
- TO-220 package type
- Isolation voltage of 2500Vrms
- Can handle up to 5A of continuous current
Application
- Low frequency power amplification
- Signal amplification and switching
- Audio amplifier applications
- Driver circuits for high-power transistors
- Voltage amplification
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Reach Compliance Code | |
| ECCN Code | EAR99 | Collector Current-Max (IC) | 0.3 A |
| Collector-Base Capacitance-Max | 25 pF | Collector-Emitter Voltage-Max | 80 V |
| Configuration | SINGLE | DC Current Gain-Min (hFE) | 30 |
| JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND | Package Style | CYLINDRICAL |
| Polarity/Channel Type | PNP | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | BOTTOM | Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 100 MHz |
| VCEsat-Max | 0.6 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
