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2SB822
2A I(C), 32V V(BR)CEO PNP
2SB822
2A I(C), 32V V(BR)CEO PNP
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2SB822 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SB822 is a silicon PNP epitaxial transistor designed for low-frequency power amplification and switching applications. It has a maximum collector-base voltage (VCBO) of -60V, a maximum collector-emitter voltage (VCEO) of -60V, and a maximum emitter-base voltage (VEBO) of -6V. The maximum collector current (IC) is 1.5A, with a maximum power dissipation of 1W.The transistor is housed in a TO-126 package, which provides good thermal conductivity and efficient heat dissipation. It operates at a maximum junction temperature of 150°C, ensuring stable performance in a wide range of operating conditions.The 2SB822 has a low collector-emitter saturation voltage and a high current gain, making it suitable for various audio amplifier and general switching applications. It is typically used in audio power amplifiers, voltage regulators, motor control circuits, and relay drivers.
Key Features
- NPN silicon epitaxial transistor
- Low saturation voltage
- High current capacity
- Fast switching speeds
- Complementary pair with 2SD1219
- TO-220AB package
- Designed for audio amplifier applications
- High reliability and performance
Application
- Switching power supplies
- Motor control systems
- Audio amplifiers
- High speed switching applications
- General purpose amplification
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 2 A | Collector-Emitter Voltage-Max | 32 V |
| Configuration | SINGLE | DC Current Gain-Min (hFE) | 120 |
| JESD-30 Code | R-PSIP-T3 | Number of Elements | 1 |
| Number of Terminals | 3 | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 0.75 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 100 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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