2SC5084

Effective Inventory6,156

BIP RF small signal transistor

  • Manufacturer Part # : 2SC5084

  • Package/Case: SOT-323

  • Brand: TOSHIBA

  • Product Categories : Memory

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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2SC5084 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for 2SC5084 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The 2SC5084 is a bipolar junction transistor with a high voltage and high current rating. It is designed for use in general purpose amplification and switching applications. The transistor is extensively used in RF amplifiers, low frequency power amplifiers, audio amplifiers, and power regulation circuits. This transistor can handle collector currents up to 1 ampere and collector-emitter voltages up to 200 volts. The 2SC5084 has a maximum power dissipation of 2 watts. It has a high current gain (hfe) of 40 to 300, meaning that a small base current can control a large collector current. This transistor is housed in a TO-126 package, which is a through-hole package that allows for easy mounting on a PCB. It has three leads - collector, emitter, and base.

Key Features

  • High voltage, high speed switching
  • Low collector saturation voltage
  • Low on-resistance
  • High current capacity
  • Low leakage current
  • Good linearity
  • Small package size
  • High reliability
  • Wide operating temperature range

Application

  • RF power amplification in mobile communication devices
  • High-frequency power amplification in medical equipment
  • RF signal transmission in radar systems
  • RF signal amplification in satellite communication systems
  • RF signal amplification in wireless infrastructure
  • RF signal amplification in industrial equipment
  • RF signal amplification in automotive applications
  • RF signal amplification in aerospace applications
  • RF signal amplification in test and measurement equipment
  • RF signal amplification in consumer electronics
TOSHIBA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code No Rohs Code Yes
Part Life Cycle Code Not Recommended Part Package Code SC-59
Pin Count ! 3 Reach Compliance Code
ECCN Code EAR99 Additional Feature ! LOW NOISE
Collector Current-Max (IC) 0.08 A Collector-Base Capacitance-Max 1.15 pF
Collector-Emitter Voltage-Max 12 V Configuration SINGLE
DC Current Gain-Min (hFE) 80 Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN Qualification Status ! Not Qualified
Surface Mount ! YES Terminal Form ! GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7000 MHz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SC5084 PDF Download

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