2SD655
Small signal bipolar transistor2SD655
Small signal bipolar transistor
Quality Assurance
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2SD655 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The 2SD655 is a bipolar junction transistor (BJT) designed for general-purpose amplifier applications. It features an NPN polarity and comes in a TO-126 package. The 2SD655 has a collector current (Ic) rating of 2 amps, a collector-base voltage (Vcb) rating of 60 volts, and an emitter-base voltage (Veb) rating of 7 volts. It also has a DC current gain (hfe) ranging from 180 to 700 at a collector current of 0.5 amps.This transistor is suitable for use in low-power amplification circuits, as well as in switching applications where moderate voltage and current levels are required. It can be used in a variety of electronic devices, including audio amplifiers, signal amplifiers, and voltage regulators.
Key Features
- P-N-P silicon transistor
- High voltage, high current capability
- Low saturation voltage
- Fast switching speed
- Complementary to 2SB635
- TO-66 package
- Low collector-emitter saturation voltage
- High breakdown voltage
- Suitable for audio power amplifier and general purpose applications
Application
- Audio amplifiers
- Power converters
- Motor control circuits
- Switching regulators
- DC-DC converters
- Battery chargers
- LED drivers
- Power supply circuits
- Voltage regulators
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | No | Part Life Cycle Code | Transferred |
Reach Compliance Code | ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.7 A | Configuration | Single |
DC Current Gain-Min (hFE) | 250 | JEDEC-95 Code | TO-92 |
JESD-30 Code | O-PBCY-T3 | JESD-609 Code | e0 |
Number of Terminals | 3 | Package Body Material | PLASTIC/EPOXY |
Package Shape | ROUND | Package Style | CYLINDRICAL |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 0.5 W |
Qualification Status ! | Not Qualified | Surface Mount ! | NO |
Terminal Finish | Tin/Lead (Sn/Pb) | Terminal Form ! | THROUGH-HOLE |
Terminal Position | BOTTOM | Transition Frequency-Nom (fT) | 250 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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6,487 In Stock
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