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2SK2220
CHANNEL Si POWER MOSFET
2SK2220
CHANNEL Si POWER MOSFET
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2SK2220 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
2SK2220 is a field-effect transistor (FET) with a maximum drain-source voltage of 100V and a continuous drain current of 2A. It belongs to the N-channel enhancement mode FET family and is widely used in various switching and amplification applications. The transistor has a low on-resistance of 0.25 ohms, which allows for efficient power handling.The 2SK2220 FET has a gate-source voltage of ±20V, making it compatible with a wide range of circuit designs. It offers fast switching speeds and high output power, making it suitable for use in power management circuits, motor control applications, and audio amplifiers.The package type for the 2SK2220 transistor is TO-220, which is a commonly used package for medium to high-power devices. This package provides good thermal performance and easy mounting on a heat sink for applications that require dissipating heat efficiently.
Key Features
- High voltage, high speed switching
- Low on-resistance
- Easy to use in a variety of applications
- Medium power surface mount transistor
- High input impedance
- Low gate threshold voltage
Application
- Switching circuits
- Amplifier circuits
- Audio circuits
- Power supply circuits
- Voltage regulator circuits
- Motor control circuits
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | No | Rohs Code | No |
| Part Life Cycle Code | Not Recommended | Part Package Code | TO-3P |
| Pin Count ! | 3 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Date Of Intro | 1997-08-01 |
| Case Connection | SOURCE | Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 8 A | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e0 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Finish | TIN LEAD |
| Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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