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AON7292
N-channel power MOSFET with a 100V voltage rating and a maximum current of 23A
AON7292
N-channel power MOSFET with a 100V voltage rating and a maximum current of 23A
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AON7292 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.590 | $0.59 |
| 10 | $0.481 | $4.81 |
| 30 | $0.426 | $12.78 |
| 100 | $0.374 | $37.40 |
| 500 | $0.342 | $171.00 |
| 1000 | $0.324 | $324.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The AON7292 is a N-channel MOSFET transistor designed for high power and high efficiency applications. It has a maximum voltage rating of 100V and can handle a continuous drain current of 9A with a peak drain current of 23A. This makes it suitable for a wide range of power management applications where high current and voltage levels are required. The transistor is housed in an 8DFN package, which is a surface mount package that is compact and easy to solder onto a PCB. This package type is commonly used in applications where space is limited and heat dissipation is important. The AON7292 features a low on-resistance, which helps to minimize power dissipation and improve efficiency. It also has a fast switching speed, making it suitable for applications that require rapid on/off transitions.
Key Features
- Single N-channel MOSFET
- 5V gate drive voltage
- Low gate charge
- Low RDS(ON)
- Fast switching speed
- Low voltage drive for easy gate drive
- Low EMI
- Compact package
- RoHS compliant
- Designed for power management applications
Application
- GPS systems
- Wearable devices
- Home automation
- Power management
- Portable electronics
- Motor control applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 10 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 23 A |
| Drain-source On Resistance-Max | 0.024 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | S-PDSO-N8 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 8 | Operating Mode ! | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | SQUARE |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 45 A |
| Surface Mount ! | YES | Terminal Finish | MATTE TIN |
| Terminal Form ! | NO LEAD | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Series | AlphaMOS |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 23A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 9A, 10V | Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 50 V | Power Dissipation (Max) | 4.1W (Ta), 28W (Tc) |
| Operating Temperature ! | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (3.3x3.3) | Package / Case | 8-PowerWDFN |
| Base Product Number | AON72 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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