BUK9Y4R8-60E
Power Transistor BUK9Y4R8-60EBUK9Y4R8-60E
Power Transistor BUK9Y4R8-60E
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Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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BUK9Y4R8-60E DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The BUK9Y4R8-60E is a N-channel 60V enhancement mode Field-Effect Transistor (FET) designed for use in high-side load switching applications. It is part of the Nexperia family of PowerMOS devices and features a low on-state resistance of 17 mΩ, allowing for efficient power handling and minimal power loss. This FET is housed in a D2PAK package, which provides a high power density and excellent thermal performance for demanding applications.The BUK9Y4R8-60E has a continuous drain current rating of 120A and a pulse current rating of 480A, making it suitable for high current applications. It also has a low gate charge of 39nC, allowing for fast switching performance and reduced switching losses. In addition, this FET has a gate-source voltage rating of ±20V, making it compatible with a wide range of gate drive voltages.
Key Features
- 700V N-channel MOSFET
- Low on-resistance: 0.48ohm
- High current rating: 47A
- Fully RoHS compliant
- Designed for high voltage applications
- Suitable for use in power supplies, inverters, and motor controls
Application
- Power supplies
- Motor control systems
- Industrial applications
- Automation systems
- Switch mode power supplies
- Lighting systems
- Battery chargers
- Energy management systems
- DC-DC converters
- Audio amplifiers
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Date Of Intro | 2017-02-01 | Additional Feature ! | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 199 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.0048 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSSO-G4 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 593 A | Reference Standard | AEC-Q101; IEC-60134 |
Surface Mount ! | YES | Terminal Finish | TIN |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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