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BUZ11-NR4941
N-Channel Power MOSFET 50V, 30A, 40mΩ, TO-220 3L, 800-TUBE
BUZ11-NR4941
N-Channel Power MOSFET 50V, 30A, 40mΩ, TO-220 3L, 800-TUBE
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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BUZ11-NR4941 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The BUZ11-NR4941, formerly known as developmental type TA9771, is a cutting-edge MOSFET that meets the demands of modern electronics applications. Its advanced design and silicon gate technology make it an ideal choice for applications requiring high speed and low gate drive power. With its N-Channel enhancement mode, this MOSFET offers superior performance in switching regulators, converters, and other high-power applications. Designed to work seamlessly with integrated circuits, the BUZ11-NR4941 provides a reliable and efficient solution for electronics designers seeking a versatile and high-performance component
Key Features
- 10A, 50V
- RDS(ON)= 0.030Ω
- Nanosecond Switching Speeds
Application
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Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Part Life Cycle Code | Active |
| Part Package Code | TO-220 3L | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 50 V |
| Drain Current-Max (ID) | 30 A | Drain-source On Resistance-Max | 0.04 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 75 W |
| Pulsed Drain Current-Max (IDM) | 120 A | Surface Mount ! | NO |
| Terminal Finish | Matte Tin (Sn) - annealed | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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