DN2625K4-G

MOSFET 250V 3.3A
3,431 Effective Inventory

DN2625K4-G

Effective Inventory3,431

MOSFET 250V 3.3A

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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DN2625K4-G DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for DN2625K4-G or email to us: Email: [email protected], we will contact you in 12 hours.

Details

Featuring high breakdown voltage, low input capacitance, and fast switching speeds, the DN2625K4-G is the perfect solution for switching and amplifying tasks that require superior performance. With two MOSFETs housed in an 8-lead, dual pad DFN package, this transistor stands out for its versatility and efficiency. While the 14-lead QFN package is not recommended for new designs, it remains available for existing projects

Key Features

    • Ruggedized and reliable design
    • Excellent thermal performance offered
    • Suitable for high-frequency applications used

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 250 V
Id - Continuous Drain Current 1.1 A Rds On - Drain-Source Resistance 3.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.1 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Channel Mode Depletion Brand Microchip Technology
Configuration Single Fall Time 20 ns
Forward Transconductance - Min 100 mS Height 2.39 mm
Length 6.73 mm Moisture Sensitive Yes
Product MOSFET Small Signals Product Type ! MOSFET
Rise Time ! 20 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 10 ns
Width 6.1 mm Unit Weight 0.011640 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification DN2625K4-G PDF Download

FAQs

What is DN2625K4-G?

The DN2625K4-G is a high-speed, low-capacitance quad N-channel enhancement mode field-effect transistor (FET) designed by Diodes Incorporated. It is ideal for high-frequency switching and amplification applications, such as RF signal processing, wireless communication, and high-speed digital interfaces.

How Does DN2625K4-G Work?

The DN2625K4-G works by utilizing N-channel FETs to control the flow of current in electronic circuits. Its low capacitance and high-speed performance make it suitable for high-frequency applications, allowing for efficient signal processing and fast switching operations.

How Many Pins does DN2625K4-G have and What are the Functions of the Pinout Configuration?

The DN2625K4-G is housed in a 14-pin TSSOP (Thin Shrink Small Outline Package) package. The pinout configuration includes:

  • G1, G2, G3, G4: Gate terminals for each N-channel FET.
  • S1, S2, S3, S4: Source terminals for each N-channel FET.
  • D1, D2, D3, D4: Drain terminals for each N-channel FET.
  • VCC: Power supply pin.
  • GND: Ground pin.

What are the Pros and Cons of DN2625K4-G?

Pros:

  • High-Speed Performance: Suitable for high-frequency signal processing and switching applications.
  • Low Capacitance: Minimizes signal distortion and loss in high-speed circuits.
  • Quad Configuration: Provides four independent N-channel FETs in a single package for space-efficient designs.
  • Enhancement Mode: Operates as enhancement mode FETs, offering ease of control in electronic circuits.

Cons:

  • Voltage Limitation: May have limitations on voltage handling compared to certain power MOSFETs.
  • Complexity: Requires proper circuit design considerations for high-speed and RF applications.
  • Heat Dissipation: May require heat sinking or thermal management for high-power applications.

Are There Any Equivalents/Alternatives to DN2625K4-G for Recommendation?

Some equivalents or alternatives to the DN2625K4-G include:

  • The FDN352APZ from Fairchild Semiconductor.
  • The SI7469DP-T1-GE3 from Vishay Siliconix.

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