DN3135N8-G

DN3135N8-G is a MOSFET with a voltage rating of 350V and a resistance of 35 ohms
7,722 Effective Inventory

DN3135N8-G

Effective Inventory7,722

DN3135N8-G is a MOSFET with a voltage rating of 350V and a resistance of 35 ohms

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DN3135N8-G DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.325 $0.32
10 $0.319 $3.19
30 $0.314 $9.42
100 $0.309 $30.90

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for DN3135N8-G or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The DN3135N8-G represents a leap forward in transistor technology, offering a low threshold depletion-mode design that takes advantage of a vertical DMOS structure and a proven silicon-gate manufacturing process. This innovative combination results in a device that combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient inherent in MOS devices. With its ability to resist thermal runaway and thermally-induced secondary breakdown, this transistor is well-suited for a wide range of applications where reliability and performance are paramount

Key Features

    • Safe and reliable shutdown
    • Low power consumption standby
    • Fault-tolerant architecture

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-89-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 350 V
Id - Continuous Drain Current 135 mA Rds On - Drain-Source Resistance 35 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Pd - Power Dissipation 1.3 W Channel Mode Depletion
Brand Microchip Technology Configuration Single
Fall Time 20 ns Forward Transconductance - Min 140 mS
Height 1.6 mm Length 4.6 mm
Product MOSFET Small Signals Product Type ! MOSFET
Rise Time ! 15 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 10 ns Width 2.6 mm
Unit Weight 0.001862 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification DN3135N8-G PDF Download

FAQs

What is DN3135N8-G?

The DN3135N8-G is a N-channel enhancement mode MOSFET transistor designed and manufactured by Diodes Incorporated. It is commonly used in electronic circuits for applications such as power management, switching, and amplification.

How Does DN3135N8-G Work?

The DN3135N8-G operates as a voltage-controlled switch where the gate voltage controls the flow of current between the source and drain terminals. When a sufficient voltage is applied to the gate terminal, the MOSFET turns on, allowing current to pass from the source to the drain. This behavior makes it suitable for various switching applications.

How Many Pins does DN3135N8-G have and What are the Functions of the Pinout Configuration?

The DN3135N8-G is housed in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pinout configuration includes:

  • GATE: Gate terminal for controlling the MOSFET.
  • SOURCE: Source terminal where current enters the MOSFET.
  • DRAIN: Drain terminal where current exits the MOSFET.
  • V+: Positive supply voltage connection.
  • V-: Ground connection.

What are the Pros and Cons of DN3135N8-G?

Pros:

  • Enhancement Mode: Operates in enhancement mode for easy control and low on-resistance.
  • High Voltage Rating: Suitable for applications requiring high voltage operation.
  • Low Threshold Voltage: Can be driven by low voltage signals.
  • Fast Switching Speed: Provides fast switching times for efficient switching applications.

Cons:

  • Gate Voltage Limit: Requires careful consideration of gate voltage levels for proper operation.
  • Heat Dissipation: May require heat sinking in high-power applications to dissipate heat effectively.

Are There Any Equivalents/Alternatives to DN3135N8-G for Recommendation?

  • Alternative MOSFET options to the DN3135N8-G include the SUP75P03-07-E3 from Vishay and the NDP6020P from ON Semiconductor.
  • Equivalent parts to the DN3135N8-G within the Diodes Incorporated product line include the DMN3018SSD-13 and DMN2040UFDF-7.

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