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DTDG23YP
Power Bipolar Transistor with 1A Collector Current, NPN Type, Silicon Material, Plastic/Epoxy EncapsulationDTDG23YP
Power Bipolar Transistor with 1A Collector Current, NPN Type, Silicon Material, Plastic/Epoxy Encapsulation
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Manufacturer Part # : DTDG23YP
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Package/Case: SOT
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Brand: ROHM SEMICONDUCTOR
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Product Categories : Bipolar Transistor Arrays, Pre-Biased
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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DTDG23YP DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
DTDG23YP is an electronic component that falls into the category of a dual N-channel depletion mode field-effect transistor (FET). This component is commonly used in electronic circuits for applications that require switching and amplification of signals. The DTDG23YP transistor is designed with two N-channel depletion mode FETs, which means that it can conduct current when the gate voltage is below a certain threshold level. This makes it suitable for use in circuits where low-power consumption and high impedance levels are desired. One of the key features of DTDG23YP is its low threshold voltage, typically around -0.8V, which allows for efficient operation in low-voltage applications. Additionally, the component has a high input impedance, which minimizes loading on preceding stages in a circuit. In terms of specifications, DTDG23YP usually has a maximum drain-source voltage (Vds) of around -30V and a drain current (Id) rating of a few milliamps. The component is typically housed in a small surface-mount package for easy integration into circuit designs.
Key Features
- 23-inch display size
- Full HD resolution
- IPS panel technology
- 178-degree viewing angles
- Sleek design with slim bezels
- 75Hz refresh rate
- 5ms response time
- AMD FreeSync support
- HDMI and VGA inputs
- Low blue light mode for reduced eye strain
Application
- Medical devices
- Industrial automation
- Robotics
- Automotive systems
- Consumer electronics
- Home appliances
- Power management
- Security systems
- Telecommunications
- IoT devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Active | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Additional Feature ! | DIGITAL |
| Collector Current-Max (IC) | 1 A | Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DC Current Gain-Min (hFE) | 300 | JESD-30 Code | R-PSSO-F3 |
| JESD-609 Code | e2 | Number of Elements | 1 |
| Number of Terminals | 3 | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 1.5 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Finish | TIN COPPER |
| Terminal Form ! | FLAT | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 80 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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