DTDG23YPT100
Product DTDG23YPT100DTDG23YPT100
Product DTDG23YPT100
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Manufacturer Part # : DTDG23YPT100
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Package/Case: SOT
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Brand: ROHM SEMICONDUCTOR
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Product Categories : Single, Pre-Biased Bipolar Transistors
Quality Assurance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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DTDG23YPT100 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
5 | $0.240 | $1.20 |
50 | $0.196 | $9.80 |
150 | $0.176 | $26.40 |
1000 | $0.152 | $152.00 |
2000 | $0.142 | $284.00 |
5000 | $0.135 | $675.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
DTDG23YPT100 is a Pre-Biased Bipolar Transistor (BJT) NPN component with a maximum voltage rating of 60 V and a maximum current rating of 1 A. It operates at a frequency of 80 MHz and has a power dissipation of 1.5 W. This transistor is designed for surface mount applications and comes in the MPT3 package. Pre-Biased transistors are transistors that are pre-configured with a specific bias voltage, allowing for easier and more efficient integration into electronic circuits. The NPN configuration indicates that this transistor is made up of three semiconductor layers, with the majority charge carriers being electrons. This type of transistor is commonly used for amplification and switching purposes in electronic circuits. The 60 V voltage rating of DTDG23YPT100 indicates its ability to withstand voltage levels up to 60 volts without damage. The maximum current rating of 1 A specifies the maximum current that can flow through the transistor without exceeding its capabilities. The operating frequency of 80 MHz suggests that this transistor is suitable for high-frequency applications.
Key Features
- Standard digital transistor
- Built-In Biasing Resistors
- Small Surface Mount Package
- Pb Free/RoHS Compliant
Application
- Industrial automation
- Robotics
- Medical devices
- Automotive electronics
- Consumer electronics
- Aerospace and defense
- Power electronics
- Telecommunications
- Instrumentation
- Sensors and control systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Pin Count ! | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 13 Weeks | Additional Feature ! | BUILT-IN BIAS RESISTOR RATIO IS 4.54 |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 1 A |
Collector-Emitter Voltage-Max | 70 V | Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
DC Current Gain-Min (hFE) | 300 | JESD-30 Code | R-PSSO-F3 |
JESD-609 Code | e2 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | NPN |
Power Dissipation-Max (Abs) | 1.5 W | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | TIN COPPER |
Terminal Form ! | FLAT | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 80 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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